Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426295 | Rough buffer layer for group III-V devices on silicon | Chi-Ming Chen, Chung-Yi Yu | 2025-09-23 |
| 12389633 | Source/drains in semiconductor devices and methods of forming thereof | Chi-Ming Chen, Po-Chun Liu, Chung-Yi Yu | 2025-08-12 |
| 12334389 | Manufacturing method of semiconductor device | Chi-Ming Chen, Po-Chun Liu, Chung-Yi Yu, Chia-Shiung Tsai | 2025-06-17 |
| 12278139 | Manufacturing method of semiconductor device | Chi-Ming Chen, Po-Chun Liu, Chung-Yi Yu, Chia-Shiung Tsai | 2025-04-15 |
| 12255232 | Gallium nitride drain structures and methods of forming the same | Chi-Ming Chen, Yung-Chang Chang | 2025-03-18 |
| 12148706 | Substrate loss reduction for semiconductor devices | Xin-Hua Huang, Chung-Yi Yu | 2024-11-19 |
| 11923237 | Manufacturing method of semiconductor device | Chi-Ming Chen, Po-Chun Liu, Chung-Yi Yu, Chia-Shiung Tsai | 2024-03-05 |
| 11901413 | Diffusion barrier layer for source and drain structures to increase transistor performance | Chi-Ming Chen, Chung-Yi Yu | 2024-02-13 |
| 11862720 | Rough buffer layer for group III-V devices on silicon | Chi-Ming Chen, Chung-Yi Yu | 2024-01-02 |
| 11824099 | Source/drains in semiconductor devices and methods of forming thereof | Chi-Ming Chen, Po-Chun Liu, Chung-Yi Yu | 2023-11-21 |
| 11652058 | Substrate loss reduction for semiconductor devices | Xin-Hua Huang, Chung-Yi Yu | 2023-05-16 |
| 11522049 | Diffusion barrier layer for source and drain structures to increase transistor performance | Chi-Ming Chen, Chung-Yi Yu | 2022-12-06 |
| 11515408 | Rough buffer layer for group III-V devices on silicon | Chi-Ming Chen, Chung-Yi Yu | 2022-11-29 |
| 11222849 | Substrate loss reduction for semiconductor devices | Xin-Hua Huang, Chung-Yi Yu | 2022-01-11 |
| 10068976 | Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performance | Chia-Ling Yeh, Man-Ho Kwan, Jiun-Lei Jerry Yu, Chun Lin Tsai | 2018-09-04 |
| 10014402 | High electron mobility transistor (HEMT) device structure | Chi-Ming Chen, Chung-Yi Yu | 2018-07-03 |
| 9818858 | Multi-layer active layer having a partial recess | Chi-Ming Chen, Chung-Yi Yu | 2017-11-14 |
| 8563437 | Method for treating group III nitride semiconductor | Wei-I Lee, Ying-Chia Hsu, Yen-Hsien Yeh | 2013-10-22 |
| 8541314 | Method for smoothing group III nitride semiconductor substrate | Wei-I Lee, Yin-Hao Wu, Yen-Hsien Yeh | 2013-09-24 |