CW

Chih-Hao Wang

TSMC: 910 patents #2 of 12,232Top 1%
MC Macronix International Co.: 5 patents #312 of 1,241Top 30%
AO Au Optronics: 3 patents #977 of 2,945Top 35%
Disney: 2 patents #2,657 of 6,686Top 40%
PF Parabellum Strategic Opportunities Fund: 2 patents #1 of 25Top 4%
VE Verrillon: 2 patents #5 of 15Top 35%
RS Realtek Semiconductor: 1 patents #915 of 1,741Top 55%
NU National Taiwan University: 1 patents #729 of 2,195Top 35%
CO Coretronic: 1 patents #418 of 684Top 65%
VT Via Technologies: 1 patents #566 of 1,108Top 55%
WI Wintek: 1 patents #127 of 250Top 55%
NU Nufern: 1 patents #17 of 40Top 45%
WN Wistron Neweb: 1 patents #298 of 577Top 55%
📍 Dashulong, MA: #1 of 4 inventorsTop 25%
Overall (All Time): #74 of 4,157,543Top 1%
937
Patents All Time

Issued Patents All Time

Showing 151–175 of 937 patents

Patent #TitleCo-InventorsDate
12166036 Multi-gate device and related methods Li-Yang Chuang, Jia-Chuan You, Kuo-Cheng Chiang 2024-12-10
12165926 FinFET device structure having dielectric features between a plurality of gate electrodes and methods of forming the same Kuan-Ting Pan, Kuo-Cheng Chiang, Shang-Wen Chang, Ching-Wei Tsai, Kuan-Lun Cheng 2024-12-10
12159902 Semiconductor device structure and methods of forming the same Lin-Yu Huang, Li-Zhen Yu, Cheng-Chi Chuang, Kuan-Lun Cheng 2024-12-03
12159912 Integrated circuit including spacer structure for transistors Chia-Hao Chang, Jia-Chuan You, Chu-Yuan Hsu, Kuo-Cheng Chiang 2024-12-03
12159922 Method of fabricating semiconductor device Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin 2024-12-03
12148812 Nano-sheet-based devices having inner spacer structures or gate portions with variable dimensions Jui-Chien Huang, Kuo-Cheng Chiang, Shi Ning Ju, Guan-Lin Chen 2024-11-19
12148815 Fin field effect transistor device structure Kuo-Cheng Ching, Kuan-Ting Pan, Shi Ning Ju 2024-11-19
12148811 Method of fabricating a semiconductor device having capacitor material Wang-Chun Huang, Ching-Wei Tsai, Kuan-Lun Cheng 2024-11-19
12148836 Gate-all-around structure and methods of forming the same Pei-Hsun Wang, Chun-Hsiung Lin 2024-11-19
12148750 Work function design to increase density of nanosheet devices Mao-Lin Huang, Kuo-Cheng Chiang, Jia-Ni Yu, Lung-Kun Chu, Chung-Wei Hsu 2024-11-19
12148795 Increasing device density and reducing cross-talk spacer structures Huan-Chieh Su, Chia-Hao Chang, Cheng-Chi Chuang, Yu-Ming Lin 2024-11-19
12148805 Semiconductor structure with wraparound backside amorphous layer Shih-Chuan Chiu, Huan-Chieh Su, Pei-Yu Wang, Cheng-Chi Chuang, Chun-Yuan Chen +3 more 2024-11-19
12148673 FinFET devices and methods of forming the same Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin, Pei-Hsun Wang 2024-11-19
12148745 Integrated hybrid standard cell structure with gate-all-around device Shang-Wen Chang, Min Cao 2024-11-19
12142692 Semiconductor device with isolation structure Kuo-Cheng Chiang, Huan-Chieh Su, Kuan-Ting Pan, Shi Ning Ju 2024-11-12
12132115 Semiconductor device structure with dielectric stressor Shi Ning Ju, Kuo-Cheng Chiang, Guan-Lin Chen 2024-10-29
12132092 Backside vias in semiconductor device Li-Zhen Yu, Huan-Chieh Su, Lin-Yu Huang, Cheng-Chi Chuang 2024-10-29
12131942 Source/drain isolation structure and methods thereof Lin-Yu Huang, Sheng-Tsung Wang, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin 2024-10-29
12125912 Semiconductor device structure and method for forming the same preliminary class Lin-Yu Huang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin 2024-10-22
12125852 Multi-gate transistors with backside power rail and reduced gate-drain capacitance Huan-Chieh Su, Li-Zhen Yu, Chun-Yuan Chen, Shih-Chuan Chiu, Cheng-Chi Chuang +1 more 2024-10-22
12125877 Nanostructure field-effect transistor device with dielectric layer for reducing substrate leakage or well isolation leakage and methods of forming Guan-Lin Chen, Kuo-Cheng Chiang, Shi Ning Ju, Jung-Chien Cheng, Kuan-Lun Cheng 2024-10-22
12119270 Hybrid source drain regions formed based on same fin and methods forming same Pei-Hsun Wang, Shih-Cheng Chen, Chun-Hsiung Lin 2024-10-15
12119391 Fin-based semiconductor device structure including self-aligned contacts and method for forming the same Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Jia-Ni Yu, Chun-Fu Lu +2 more 2024-10-15
12119404 Gate all around structure with additional silicon layer and method for forming the same Chen-Han Wang, Pei-Hsun Wang, Chun-Hsiung Lin 2024-10-15
12107169 Contact structure for stacked multi-gate device Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Chien Ning Yao, Kuo-Cheng Chiang 2024-10-01