Issued Patents All Time
Showing 1–25 of 133 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432975 | Semiconductor device with backside power rail | Pei-Yu Wang, Yu-Xuan Huang, Chun-Yuan Chen, Li-Zhen Yu | 2025-09-30 |
| 12424484 | Spacers for semiconductor devices including backside power rails | Li-Zhen Yu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-09-23 |
| 12424486 | Integrated circuit structure with backside interconnection structure having air gap | Li-Zhen Yu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-09-23 |
| 12414362 | Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gate | Li-Zhen Yu, Lin-Yu Huang, Chih-Hao Wang | 2025-09-09 |
| 12402345 | Semiconductor structure and method for forming the same | Yun Ju FAN, Lin-Yu Huang, Sheng-Tsung Wang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-08-26 |
| 12389618 | Semiconductor transistor device includes backside via electrically connecting epitaxial source/drain structures and method for forming the same | Lo-Heng Chang, Li-Zhen Yu, Lin-Yu Huang, Chih-Hao Wang | 2025-08-12 |
| 12382710 | Method for forming long channel back-side power rail device | Cheng-Chi Chuang, Chih-Hao Wang, Zhi-Chang Lin, Li-Zhen Yu | 2025-08-05 |
| 12376356 | Semiconductor devices with backside power rail and methods of fabrication thereof | Chun-Yuan Chen, Pei-Yu Wang, Chih-Hao Wang | 2025-07-29 |
| 12369365 | Semiconductor devices with backside power rail and method thereof | Li-Zhen Yu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-07-22 |
| 12363964 | Semiconductor device having dielectric hybrid fin | Chun-Yuan Chen, Li-Zhen Yu, Cheng-Chi Chuang, Chih-Hao Wang | 2025-07-15 |
| 12363946 | Source/drain contacts and methods of forming same | Li-Zhen Yu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-07-15 |
| 12363939 | Semiconductor device with backside power rail and methods of fabrication thereof | Li-Zhen Yu, Shih-Chuan Chiu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-07-15 |
| 12356688 | Method for forming semiconductor device | Sheng-Tsung Wang, Chun-Yuan Chen, Lin-Yu Huang, Min-Hsuan Lu, Chih-Hao Wang | 2025-07-08 |
| 12349409 | Semiconductor device having a gate contact on a low-k liner | Meng-Huan Jao, Yi-Bo Liao, Cheng-Chi Chuang, Jin Cai, Chih-Hao Wang | 2025-07-01 |
| 12336215 | Semiconductor device structure and method for forming the same | Lin-Yu Huang, Sheng-Tsung Wang, Li-Zhen Yu, Cheng-Chi Chuang, Chih-Hao Wang | 2025-06-17 |
| 12328917 | Semiconductor structure having second contact structure over second side of first S/D structure | Lin-Yu Huang, Li-Zhen Yu, Chih-Hao Wang | 2025-06-10 |
| 12324215 | Semiconductor device structure with metal gate stack | Jia-Chuan You, Kuo-Cheng Chiang, Chih-Hao Wang | 2025-06-03 |
| 12324188 | Field effect transistor with source/drain contact isolation structure and method | Meng-Huan Jao, Lin-Yu Huang, Sheng-Tsung Wang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-06-03 |
| 12317528 | Gate isolation feature and manufacturing method thereof | Kuan-Ting Pan, Jia-Chuan You, Shi Ning Ju, Kuo-Cheng Chiang, Yi-Ruei Jhan +2 more | 2025-05-27 |
| 12302607 | Backside gate contact | Chun-Yuan Chen, Lo-Heng Chang, Li-Zhen Yu, Lin-Yu Huang, Cheng-Chi Chuang +1 more | 2025-05-13 |
| 12300727 | Process and structure for source/drain contacts | Meng-Huan Jao, Lin-Yu Huang, Sheng-Tsung Wang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-05-13 |
| 12283521 | Methods of forming spacers for semiconductor devices including backside power rails | Li-Zhen Yu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang | 2025-04-22 |
| 12278273 | Semiconductor device with backside gate isolation structure and method for forming the same | Chun-Yuan Chen, Li-Zhen Yu, Lo-Heng Chang, Cheng-Chi Chuang, Kuan-Lun Cheng +1 more | 2025-04-15 |
| 12272634 | Semiconductor structure having an anchor-shaped backside via | Chun-Yuan Chen, Cheng-Chi Chuang, Chih-Hao Wang | 2025-04-08 |
| 12266538 | Method for manufacturing semiconductor device using etchant composition having high etching selectivity | Chia-Chien Kuang, Fang-Wei Lee, Meng-Huan Jao | 2025-04-01 |