Issued Patents All Time
Showing 1–25 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12382655 | Transistors having vertical nanostructures | Chun-Hsiung Lin, Cheng-Ting Chung, Chih-Hao Wang | 2025-08-05 |
| 12356645 | Self-aligned source/drain metal contact | Kuo-Cheng Chiang, Chih-Hao Wang | 2025-07-08 |
| 12243780 | Semiconductor device structure and method for forming the same | Ching-Wei Tsai, Yu-Xuan Huang, Kuan-Lun Cheng, Chih-Hao Wang, Min Cao +3 more | 2025-03-04 |
| 12218226 | Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process | Chun-Hsiung Lin, Chih-Hao Wang, Kuo-Cheng Ching, Jui-Chien Huang | 2025-02-04 |
| 12211900 | Hybrid channel semiconductor device and method | Pei-Yu Wang | 2025-01-28 |
| 12198986 | Dual channel gate all around transistor device and fabrication methods thereof | Wei-Sheng Yun, Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Chao Chou +1 more | 2025-01-14 |
| 12148836 | Gate-all-around structure and methods of forming the same | Chih-Hao Wang, Chun-Hsiung Lin | 2024-11-19 |
| 12148673 | FinFET devices and methods of forming the same | Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin | 2024-11-19 |
| 12119404 | Gate all around structure with additional silicon layer and method for forming the same | Chen-Han Wang, Chun-Hsiung Lin, Chih-Hao Wang | 2024-10-15 |
| 12119270 | Hybrid source drain regions formed based on same fin and methods forming same | Shih-Cheng Chen, Chun-Hsiung Lin, Chih-Hao Wang | 2024-10-15 |
| 11996483 | FET with wrap-around silicide and fabrication methods thereof | Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin +1 more | 2024-05-28 |
| 11984361 | Multi-gate devices and method of fabricating the same | Lo-Heng Chang, Chih-Hao Wang, Kuo-Cheng Chiang, Jung-Hung Chang | 2024-05-14 |
| 11855216 | Inner spacers for gate-all-around transistors | Kuo-Cheng Chiang, Zhi-Chang Lin, Shih-Cheng Chen, Chih-Hao Wang, Lo-Heng Chang +1 more | 2023-12-26 |
| 11855178 | Semiconductor devices having air-gap | Chun-Hsiung Lin, Chih-Chao Chou, Chia-Hao Chang, Chih-Hao Wang | 2023-12-26 |
| 11837506 | FinFET devices and methods of forming the same | Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin | 2023-12-05 |
| 11776854 | Semiconductor structure with hybrid nanostructures | Chun-Hsiung Lin, Chih-Hao Wang, Chih-Chao Chou | 2023-10-03 |
| 11777033 | Transistors having vertical nanostructures | Chun-Hsiung Lin, Cheng-Ting Chung, Chih-Hao Wang | 2023-10-03 |
| 11742387 | Hybrid channel semiconductor device and method | Pei-Yu Wang | 2023-08-29 |
| 11735666 | Gate all around structure with additional silicon layer and method for forming the same | Chen-Han Wang, Chun-Hsiung Lin, Chih-Hao Wang | 2023-08-22 |
| 11721594 | Dual channel gate all around transistor device and fabrication methods thereof | Wei-Sheng Yun, Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Chao Chou +1 more | 2023-08-08 |
| 11695076 | FET with wrap-around silicide and fabrication methods thereof | Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin +1 more | 2023-07-04 |
| 11637207 | Gate-all-around structure and methods of forming the same | Chun-Hsiung Lin, Chih-Hao Wang | 2023-04-25 |
| 11600529 | Multi-gate devices and method of fabricating the same | Lo-Heng Chang, Chih-Hao Wang, Kuo-Cheng Chiang, Jung-Hung Chang | 2023-03-07 |
| 11563104 | Semiconductor devices having air-gap spacers | Chun-Hsiung Lin, Chih-Chao Chou, Chia-Hao Chang, Chih-Hao Wang | 2023-01-24 |
| 11532521 | Dual channel gate all around transistor device and fabrication methods thereof | Wei-Sheng Yun, Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Chao Chou +1 more | 2022-12-20 |