Issued Patents All Time
Showing 76–100 of 414 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855179 | Semiconductor devices and methods of manufacturing thereof | Shih-Yao Lin, Hsiao-Wen Lee, Ya-Yi Tsai, Shu-Uei Jang, Shu-Yuan Ku | 2023-12-26 |
| 11854899 | Semiconductor devices and methods of manufacturing thereof | Shih-Yao Lin, Chao-Cheng Chen, Chen-Ping Chen, Ming-Ching Chang, Chia-Hao Yu +1 more | 2023-12-26 |
| 11854883 | Interconnect structure and method for forming the same | Che-Cheng Chang | 2023-12-26 |
| 11854962 | Via structure and methods thereof | Che-Cheng Chang | 2023-12-26 |
| 11842932 | Notched gate structure fabrication | Chang-Yin Chen, Che-Cheng Chang | 2023-12-12 |
| 11842929 | Semiconductor devices and methods of manufacturing thereof | Kuei-Yu Kao, Shih-Yao Lin, Chen-Ping Chen, Chih-Chung Chiu, Chen-Yui Yang +4 more | 2023-12-12 |
| 11837649 | Method for selective removal of gate dielectric from dummy fin | Shih-Yao Lin | 2023-12-05 |
| 11817503 | Semiconductor device | Che-Cheng Chang | 2023-11-14 |
| 11804534 | Semiconductor device and manufacturing method thereof | Shih-Chang Tsai, Wen-Shuo Hsieh, Te-Yung Liu | 2023-10-31 |
| 11804484 | FinFet isolation structure and method for fabricating the same | Che-Cheng Chang | 2023-10-31 |
| 11784185 | Source/drain regions in fin field effect transistors (FinFETs) and methods of forming same | Che-Cheng Chang, Horng-Huei Tseng | 2023-10-10 |
| 11784055 | Method of forming semiconductor device with fin isolation | Chang-Yin Chen, Che-Cheng Chang | 2023-10-10 |
| 11769821 | Semiconductor device having a corner spacer | Chen-Ping Chen, Kuei-Yu Kao, Shih-Yao Lin, Ming-Ching Chang, Chao-Cheng Chen | 2023-09-26 |
| 11764222 | Method of forming a dummy fin between first and second semiconductor fins | Shih-Yao Lin, Yun-Ting Chou, Jr-Jung Lin | 2023-09-19 |
| 11757024 | Etch selectivity control for epitaxy process window enlargement in semiconductor devices | Shih-Yao Lin, Te-Yung Liu | 2023-09-12 |
| 11757019 | Dummy gate cutting process and resulting gate structures | Shih-Yao Lin, Shu-Uei Jang, Ya-Yi Tsai, Shu-Yuan Ku | 2023-09-12 |
| 11721746 | Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features | Che-Cheng Chang, Jr-Jung Lin, Shih-Hao Chen, Mu-Tsang Lin, Yung-Jung Chang | 2023-08-08 |
| 11721741 | Field-effect transistor and method of forming the same | Chen-Ping Chen, Ming-Ching Chang, Chao-Cheng Chen | 2023-08-08 |
| 11721700 | Semiconductor devices and methods of manufacturing thereof | Shih-Yao Lin, Ming-Ching Chang, Shu-Yuan Ku, Tzu-Chung Wang | 2023-08-08 |
| 11715779 | Multi-channel devices and methods of manufacture | Shih-Yao Lin, Chih-Chung Chiu, Kuei-Yu Kao, Chen-Ping Chen | 2023-08-01 |
| 11699701 | Semiconductor device | Che-Cheng Chang, Horng-Huei Tseng | 2023-07-11 |
| 11688643 | Semiconductor devices and methods of manufacturing thereof | Shih-Yao Lin, Hsiao-Wen Lee | 2023-06-27 |
| 11670711 | Metal gate electrode of a semiconductor device | Jr-Jung Lin, Jin-Aun Ng, Ming-Ching Chang, Chao-Cheng Chen | 2023-06-06 |
| 11670635 | Semiconductor device and method | Che-Cheng Chang, Horng-Huei Tseng | 2023-06-06 |
| 11652003 | Gate formation process | Chi-Sheng Lai, Wei-Chung Sun, Li Chen, Kuei-Yu Kao | 2023-05-16 |