Issued Patents All Time
Showing 26–50 of 50 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7553727 | Using implanted poly-1 to improve charging protection in dual-poly process | Ming Sang Kwan, Bradley Marc Davis, Jean Y. Yang, Yi He | 2009-06-30 |
| 7432688 | Soft-transition controller of a synchronous converter | Lam Vu | 2008-10-07 |
| 7394702 | Methods for erasing and programming memory devices | Meng Ding, Wei Zheng | 2008-07-01 |
| 7285827 | Back-to-back NPN/PNP protection diodes | Yi He, Meng Ding, Wei Zheng | 2007-10-23 |
| 7269067 | Programming a memory device | Shankar Sinha, Yi He | 2007-09-11 |
| 7262095 | System and method for reducing process-induced charging | Ashot Melik Martirosian, Mark Randolph | 2007-08-28 |
| 7215577 | Flash memory cell and methods for programming and erasing | Zengtao T. Liu, Yi He, Mark Randolph | 2007-05-08 |
| 7167398 | System and method for erasing a memory cell | Satoshi Torii, Mark Randolph, Yi He | 2007-01-23 |
| 7120063 | Flash memory cell and methods for programming and erasing | Zengtao T. Liu, Yi He, Mark Randolph | 2006-10-10 |
| 7042766 | Method of programming a flash memory device using multilevel charge storage | Zhigang Wang, Nian Yang | 2006-05-09 |
| 7042767 | Flash memory unit and method of programming a flash memory device | Zhigang Wang, Nian Yang | 2006-05-09 |
| 6967873 | Memory device and method using positive gate stress to recover overerased cell | Darlene Hamilton, Mark Randolph, Yi He, Edward Hsia, Kulachet Tanpairoj +2 more | 2005-11-22 |
| 6934190 | Ramp source hot-hole programming for trap based non-volatile memory devices | Zengtao T. Liu, Yi He, Sameer Haddad, Mark Randolph | 2005-08-23 |
| 6906959 | Method and system for erasing a nitride memory device | Mark Randolph, Chi Chang, Yi He, Wei Zheng, Edward Franklin Runnion | 2005-06-14 |
| 6897110 | Method of protecting a memory array from charge damage during fabrication | Yi He, Wei Zheng, Mark Randolph, Darlene Hamilton, Ken Tanpairoj | 2005-05-24 |
| 6869844 | Method and structure for protecting NROM devices from induced charge damage during device fabrication | Yider Wu, Jean Y. Yang | 2005-03-22 |
| 6834012 | Memory device and methods of using negative gate stress to correct over-erased memory cells | Yi He, Edward Franklin Runnion, Zengtao T. Liu, Mark Randolph | 2004-12-21 |
| 6797565 | Methods for fabricating and planarizing dual poly scalable SONOS flash memory | Jean Y. Yang, Yider Wu | 2004-09-28 |
| 6795342 | System for programming a non-volatile memory cell | Yi He, Mark Randolph, Sameer Haddad | 2004-09-21 |
| 6795357 | Method for reading a non-volatile memory cell | Yi He, Mark Randolph, Sameer Haddad | 2004-09-21 |
| 6788583 | Pre-charge method for reading a non-volatile memory cell | Yi He, Edward Franklin Runnion, Mark Randolph, Darlene Hamilton, Pauling Chen +1 more | 2004-09-07 |
| 6768160 | Non-volatile memory cell and method of programming for improved data retention | Yu-Chuan Li, Mark Randolph | 2004-07-27 |
| 6639844 | Overerase correction method | Yi He, Mark Randolph | 2003-10-28 |
| 6628545 | Memory circuit for suppressing bit line current leakage | Jiang Li, Yider Wu | 2003-09-30 |
| 6469915 | Resonant reset dual switch forward DC-to-DC converter | Guisong Huang, Yilei Gu, Alpha J. Zhang | 2002-10-22 |