MW

Marshall D. Wilson

SD Semiconductor Diagnostics: 7 patents #2 of 19Top 15%
SC Semilab Semiconductor Physics Laboratory Co.: 4 patents #2 of 22Top 10%
Overall (All Time): #312,717 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12154833 Semiconductor doping characterization method using photoneutralization time constant of corona surface charge Jacek Lagowski, Carlos Almeida, Bret Schrayer, Alexandre Savtchouk 2024-11-26
12027430 Semiconductor doping characterization method using photoneutralization time constant of corona surface charge Jacek Lagowski, Carlos Almeida, Bret Schrayer, Alexandre Savtchouk 2024-07-02
11561254 Topside contact device and method for characterization of high electron mobility transistor (HEMT) heterostructure on insulating and semi-insulating substrates Bret Schrayer, Alexandre Savtchouk, Dmitriy Marinskiy, Jacek Lagowski 2023-01-24
10969370 Measuring semiconductor doping using constant surface potential corona charging Jacek Lagowski, Alexandre Savtchouk, Carlos Almeida, Csaba Buday 2021-04-06
9685906 Photoluminescence mapping of passivation defects for silicon photovoltaics Jacek Lagowski, Ferenc Korsos, Gyorgy Nadudvari 2017-06-20
8912799 Accurate measurement of excess carrier lifetime using carrier decay method Jacek Lagowski 2014-12-16
8093920 Accurate measuring of long steady state minority carrier diffusion lengths Jacek Lagowski, Alexandre Savtchouk 2012-01-10
7188513 Detecting concealed security threats 2007-03-13
7100424 Apparatus for accessing container security threats and method of use 2006-09-05
6815974 Determining composition of mixed dielectrics Jacek Lagowski, John F. D'Amico, Alexandre Savtchouk, Lubomir L. Jastrzebski 2004-11-09
6680621 Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current Alexander Savtchouk, Jacek Lagowski, John F. D'Amico, Lubomir L. Jastrzebski 2004-01-20
6597193 Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current Jacek Lagowski, Alexander Savtchouk 2003-07-22
6569691 Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer Lubomir L. Jastrzebski, Alexander Savtchouk 2003-05-27
6538462 Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge Jacek Lagowski, Alexander Savtchouk 2003-03-25
6037797 Measurement of the interface trap charge in an oxide semiconductor layer interface Jacek Lagowski, Piotr Edelman 2000-03-14