Topside contact device and method for characterization of high electron mobility transistor (HEMT) heterostructure on insulating and semi-insulating substrates

Assignee

• Semilab Semiconductor Physics Laboratory Co.

Inventors

• Marshall D. Wilson (15 patents)
• Bret Schrayer (3 patents)
• Alexandre Savtchouk (7 patents)
• Dmitriy Marinskiy (6 patents)
• Jacek Lagowski (26 patents)

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