Issued Patents All Time
Showing 51–74 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8288254 | Programmable metallization memory cell with planarized silver electrode | Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov +2 more | 2012-10-16 |
| 8289759 | Non-volatile memory cell with precessional switching | Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen +3 more | 2012-10-16 |
| 8289758 | Magnetic tunnel junction with electronically reflective insulative spacer | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Zheng Gao, Xiaobin Wang | 2012-10-16 |
| 8289756 | Non volatile memory including stabilizing structures | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Haiwen Xi, Xiaobin Wang +1 more | 2012-10-16 |
| 8289751 | Non-volatile memory cell with programmable unipolar switching element | Nurul Amin, Insik Jin, Ming Sun, Venu Vaithyanathan, YoungPil Kim +1 more | 2012-10-16 |
| 8288749 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Venugopalan Vaithyanathan, Insik Jin | 2012-10-16 |
| 8248836 | Non-volatile memory cell stack with dual resistive elements | Insik Jin, YoungPil Kim, Ming Sun, Chulmin Jung, Venugopalan Vaithyanathan +2 more | 2012-08-21 |
| 8227783 | Non-volatile resistive sense memory with praseodymium calcium manganese oxide | Andreas Roelofs, Markus Jan Peter Siegert, Venugopalan Vaithyanathan, Yongchul Ahn, Muralikrishnan Balakrishnan +1 more | 2012-07-24 |
| 8217478 | Magnetic stack with oxide to reduce switching current | Xiaohua Lou, Yuankai Zheng, Wenzhong Zhu, Zheng Gao | 2012-07-10 |
| 8213222 | Magnetic tunnel junction with compensation element | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Xiaobin Wang, Xiaohua Lou | 2012-07-03 |
| 8203875 | Anti-parallel diode structure and method of fabrication | Nurul Amin, Insik Jim, Venugopalan Vaithyanathan, YoungPil Kim | 2012-06-19 |
| 8203865 | Non-volatile memory cell with non-ohmic selection layer | Insik Jin, Venugopalan Vaithyanathan, Haiwen Xi, Michael Xuefei Tang, Brian Lee | 2012-06-19 |
| 8198181 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Venugopalan Vaithyanathan, Insik Jin | 2012-06-12 |
| 8178864 | Asymmetric barrier diode | Insik Jin, Venugopalan Vaithyanathan, Cedric Bedoya, Markus Jan Peter Siegert | 2012-05-15 |
| 8158964 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Venugopalan Vaithyanathan, Insik Jin | 2012-04-17 |
| 8039394 | Methods of forming layers of alpha-tantalum | Ivan Petrov Ivanov, Mallika Kamarajugadda, Paul E. Anderson | 2011-10-18 |
| 8022547 | Non-volatile memory cells including small volume electrical contact regions | Venugopalan Vaithyanathan, Insik Jin | 2011-09-20 |
| 8023316 | Magnetic tunnel junction with compensation element | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Xiaobin Wang, Xiaohua Lou | 2011-09-20 |
| 7936585 | Non-volatile memory cell with non-ohmic selection layer | Insik Jin, Venugopalan Vaithyanathan, Haiwen Xi, Michael Xuefei Tang, Brian Lee | 2011-05-03 |
| 7911833 | Anti-parallel diode structure and method of fabrication | Nurul Amin, Insik Jin, Venugopalan Vaithyanathan, YoungPil Kim | 2011-03-22 |
| 7875923 | Band engineered high-K tunnel oxides for non-volatile memory | Insik Jin, Dimitar V. Dimitrov, Song S. Xue | 2011-01-25 |
| 7826256 | STRAM with compensation element | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Xiaobin Wang, Xiaohua Lou | 2010-11-02 |
| 7750386 | Memory cells including nanoporous layers containing conductive material | Venkatram Venkatasamy, Ming Sun, Michael Xuefei Tang, Insik Jin, Dimitar V. Dimitrov | 2010-07-06 |
| 7700985 | Ferroelectric memory using multiferroics | Haiwen Xi, Yang Li, Insik Jin, Song S. Xue | 2010-04-20 |