Issued Patents All Time
Showing 26–50 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9147407 | Write head having non-magnetic write gap seed layer, and method | Venkateswara Rao Inturi, Doug Lin, Huaqing Yin, Jiaoming Qiu | 2015-09-29 |
| 9142226 | Thin film with tuned grain size | Venkateswara Rao Inturi, Huaqing Yin, Michael C. Kautzky, Mark Thomas Kief, Meng Zhu +1 more | 2015-09-22 |
| 9099185 | Using different programming modes to store data to a memory cell | YoungPil Kim, Rodney Virgil Bowman, Dadi Setiadi | 2015-08-04 |
| 9082958 | Tunneling magneto-resistive sensors with buffer layers | Bin Lu, Qing He, Mark William Covington, Yunhao Xu | 2015-07-14 |
| 9034150 | Thin film with tuned anisotropy and magnetic moment | Venkateswara Rao Inturi, Joseph Mundenar | 2015-05-19 |
| 9030864 | Magnetic tunnel junction with electronically reflective insulative spacer | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Zheng Gao, Xiaobin Wang | 2015-05-12 |
| 9019659 | Write pole with varying bevel angles | Huaqing Yin, Zhe Shen, Kirill Rivkin, Jianhua Xue | 2015-04-28 |
| 9001578 | Soft erasure of memory cells | YoungPil Kim, Dadi Setiadi, Antoine Khoueir, Rodney Virgil Bowman | 2015-04-07 |
| 8922956 | Tunneling magneto-resistive sensors with buffer layers | Bin Lu, Qing He, Mark William Covington, Yunhao Xu | 2014-12-30 |
| 8860157 | Memory cell with phonon-blocking insulating layer | Yuankai Zheng, Xiaohua Lou, Zheng Gao, Haiwen Xi | 2014-10-14 |
| 8854772 | Adhesion enhancement of thin film PZT structure | Dadi Setiadi, Young-Pil Kim | 2014-10-07 |
| 8772122 | Programmable metallization memory cell with layered solid electrolyte structure | Nurul Amin, Insik Jin, Andrew James Wirebaugh, Venugopalan Vaithyanathan, Ming Sun | 2014-07-08 |
| 8705212 | Magnetic element with enhanced coupling portion | Jason Bryce Gadbois, Michael C. Kautzky, Mark William Covington, Dian Song, Dimitar V. Dimitrov +3 more | 2014-04-22 |
| 8686524 | Magnetic stack with oxide to reduce switching current | Xiaohua Lou, Yuankai Zheng, Wenzhong Zhu, Zheng Gao | 2014-04-01 |
| 8686388 | Non-volatile resistive sense memory with improved switching | Andreas Roelofs, Markus Jan Peter Siegert, Venugopalan Vaithyanathan, Yongchul Ahn, Muralikrishnan Balakrishnan +1 more | 2014-04-01 |
| 8648426 | Tunneling transistors | Insik Jin, Venugopalan Vaithyanathan, Cedric Bedoya, Markus Jan Peter Siegert | 2014-02-11 |
| 8553369 | Magnetic element with improved stability and including at least one antiferromagnetic tab | Dion Song, Mark William Covington, Qing He, Dimitar V. Dimitrov, Wonjoon Jung +1 more | 2013-10-08 |
| 8508988 | Magnetic tunnel junction with compensation element | Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Xiaobin Wang, Xiaohua Lou | 2013-08-13 |
| 8487291 | Programmable metallization memory cell with layered solid electrolyte structure | Nurul Amin, Insik Jin, Andrew James Wirebaugh, Venugopalan Vaithyanathan, Ming Sun | 2013-07-16 |
| 8446752 | Programmable metallization cell switch and memory units containing the same | Ming Sun, Nurul Amin, Insik Jin, Young-Pil Kim, Chulmin Jung +2 more | 2013-05-21 |
| 8426222 | Magnetic stack with oxide to reduce switching current | Xiaohua Lou, Yuankai Zheng, Wenzhong Zhu, Zheng Gao | 2013-04-23 |
| 8421048 | Non-volatile memory with active ionic interface region | Venugopalan Vaithyanathan, Markus Jan Peter Siegert, Muralikrishnan Balakrishnan, Insik Jin | 2013-04-16 |
| 8405171 | Memory cell with phonon-blocking insulating layer | Yuankai Zheng, Xiaohua Lou, Zheng Gao, Haiwen Xi | 2013-03-26 |
| 8367464 | Nano-dimensional non-volatile memory cells | Venugopalan Vaithyanathan, Insik Jin | 2013-02-05 |
| 8309945 | Programmable metallization memory cell with planarized silver electrode | Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov +2 more | 2012-11-13 |