VV

Venkatram Venkatasamy

ST Seagate Technology: 13 patents #432 of 4,626Top 10%
IBM: 1 patents #44,794 of 70,183Top 65%
Overall (All Time): #345,417 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11015256 Near field transducers including electrodeposited plasmonic materials and methods of forming Lien Lee, Jie Gong, Yongjun Zhao, Lijuan Zou, Dongsung Hong +2 more 2021-05-25
10100422 Near field transducers including electrodeposited plasmonic materials and methods of forming Lien Lee, Jie Gong, Yongjun Zhao, Lijuan Zou, Dongsung Hong +2 more 2018-10-16
9305575 Heat assisted magnetic recording heads having bilayer heat sinks Tong Zhao, Ibro Tabakovic, Michael C. Kautzky, Jie Gong 2016-04-05
8940577 Programmable metallization cells and methods of forming the same Ming Sun, Michael Xuefei Tang 2015-01-27
8902719 Heat assisted magnetic recording heads having bilayer heat sinks Tong Zhao, Ibro Tabakovic, Michael C. Kautzky, Jie Gong 2014-12-02
8435827 Programmable resistive memory cell with sacrificial metal Ming Sun, Dadi Setiadi 2013-05-07
8343801 Method of forming a programmable metallization memory cell Ming Sun, Michael Xuefei Tang, Insik Jin, Philip G. Pitcher, Nurul Amin 2013-01-01
8293571 Programmable metallization cells and methods of forming the same Ming Sun, Michael Xuefei Tang 2012-10-23
8288753 Programmable resistive memory cell with oxide layer Ming Sun, Michael Xuefei Tang, Insik Jin, Philip G. Pitcher, Nurul Amin 2012-10-16
8097874 Programmable resistive memory cell with sacrificial metal Ming Sun, Dadi Setiadi 2012-01-17
8058646 Programmable resistive memory cell with oxide layer Ming Sun, Michael Xuefei Tang, Insik Jin, Philip G. Pitcher, Nurul Amin 2011-11-15
7918984 Method of electrodepositing germanium compound materials on a substrate Qiang Huang, Andrew J. Kellock, Xiaoyan Shao 2011-04-05
7842938 Programmable metallization cells and methods of forming the same Ming Sun, Michael Xuefei Tang 2010-11-30
7750386 Memory cells including nanoporous layers containing conductive material Wei Tian, Ming Sun, Michael Xuefei Tang, Insik Jin, Dimitar V. Dimitrov 2010-07-06