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Optimized electrodes for Re-RAM |
Deepak C. Sekar, April D. Schricker, Klaus Schuegraf |
2014-01-28 |
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Electrode diffusions in two-terminal non-volatile memory devices |
Huiwen Xu, Chuanbin Pan |
2013-11-26 |
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Modulation of resistivity in carbon-based read-writeable materials |
Huiwen Xu, Er-Xuan Ping |
2013-06-25 |
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Reverse leakage reduction and vertical height shrinking of diode with halo doping |
Mark Clark, S. Brad Herner, Tanmay Kumar |
2013-05-28 |
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In-situ passivation methods to improve performance of polysilicon diode |
Kun Hou, Chuanbin Pan, Abhijit Bandyopadhyay, Yung-Tin Chen |
2013-05-28 |
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Soft forming reversible resistivity-switching element for bipolar switching |
Abhijit Bandyopadhyay, Brian Le, Roy E. Scheuerlein, Li Xiao |
2012-10-16 |
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Optimized electrodes for Re-RAM |
Depak C. Sekar, April D. Schricker, Klaus Schuegraf, Raghuveer S. Makala |
2012-09-11 |
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Surface treatment to improve resistive-switching characteristics |
Michael Miller, Prashant B. Phatak, Tony P. Chiang, April D. Schricker, Tanmay Kumar |
2011-11-22 |
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Method of programming a nonvolatile memory device containing a carbon storage material |
Tanmay Kumar |
2011-07-12 |
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MIIM diodes having stacked structure |
Deepak C. Sekar, Tanmay Kumar, Peter Rabkin, Er-Xuan Ping |
2011-06-28 |
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Method of making a two-terminal non-volatile memory pillar device with rounded corner |
Huiwen Xu, Chuanbin Pan |
2011-06-07 |
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Dual insulating layer diode with asymmetric interface state and method of fabrication |
Deepak C. Sekar, Mark Clark, Dat Nguyen, Tanmay Kumar |
2011-03-01 |
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Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
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2010-12-28 |
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Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
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Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
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2010-05-25 |