Issued Patents All Time
Showing 51–75 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9763477 | Ceramic heating elements for electronic cigarettes | — | 2017-09-19 |
| 9721634 | Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance | Yu Lu, Chando Park, Seung H. Kang | 2017-08-01 |
| 9693588 | Heating elements for electronic cigarettes | — | 2017-07-04 |
| 9634237 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Jimmy Jianan Kan, Matthias Georg Gottwald, Chando Park, Seung H. Kang | 2017-04-25 |
| 9622511 | Leakproof atomizer | — | 2017-04-18 |
| 9620706 | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device | Kangho Lee, Chando Park, Jimmy Jianan Kan, Matthias Georg Gottwald, Seung H. Kang | 2017-04-11 |
| 9590010 | Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer | Matthias Georg Gottwald, Jimmy Jianan Kan, Chando Park, Seung H. Kang | 2017-03-07 |
| 9583696 | Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction | Matthias Georg Gottwald, Chando Park, Kangho Lee, Seung H. Kang | 2017-02-28 |
| 9548096 | Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods | Xia Li, Yu Lu | 2017-01-17 |
| 9543036 | System and method of programming a memory cell | Xia Li, Seung H. Kang | 2017-01-10 |
| 9496314 | Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area | Yu Lu, Xia Li, Seung H. Kang | 2016-11-15 |
| 9489999 | Magnetic tunnel junction resistance comparison based physical unclonable function | Brian M. Rosenberg, Xu Guo | 2016-11-08 |
| 9444035 | Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication | Chando Park, Kangho Lee, Jimmy Jianan Kan, Matthias Georg Gottwald, Seung H. Kang | 2016-09-13 |
| 9411727 | Split write operation for resistive memory cache | Xiangyu Dong, Jungwon Suh | 2016-08-09 |
| 9384810 | Monolithic multi-channel adaptable STT-MRAM | Seung H. Kang | 2016-07-05 |
| 9368715 | Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) | Kangho Lee, Seung H. Kang | 2016-06-14 |
| 9368716 | Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ | Shiqun Gu, Seung H. Kang | 2016-06-14 |
| 9343135 | Physically unclonable function based on programming voltage of magnetoresistive random-access memory | Steven M. Millendorf, Xu Guo, David M. Jacobson, Kangho Lee, Seung H. Kang +1 more | 2016-05-17 |
| 9324768 | System and method of shared bit line MRAM | Xia Li, Seung H. Kang | 2016-04-26 |
| 9324404 | MRAM sensing with magnetically annealed reference cell | Hari M. Rao | 2016-04-26 |
| 9298946 | Physically unclonable function based on breakdown voltage of metal-insulator-metal device | Steven M. Millendorf, Xu Guo, David M. Jacobson, Kangho Lee, Seung H. Kang +1 more | 2016-03-29 |
| 9245608 | Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device | Wei-Chuan Chen, Kangho Lee, Seung H. Kang | 2016-01-26 |
| 9244853 | Tunable multi-tiered STT-MRAM cache for multi-core processors | Seung H. Kang, Xiaoxia Wu | 2016-01-26 |
| 9239788 | Split write operation for resistive memory cache | Xiangyu Dong, Jungwon Suh | 2016-01-19 |
| 9230630 | Physically unclonable function based on the initial logical state of magnetoresistive random-access memory | Steven M. Millendorf, Xu Guo, David M. Jacobson, Kangho Lee, Seung H. Kang +1 more | 2016-01-05 |