Issued Patents All Time
Showing 101–125 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8681536 | Magnetic tunnel junction (MTJ) on planarized electrode | Seung H. Kang, Xia Li, Wei-Chuan Chen, Kangho Lee, Wah Nam Hsu | 2014-03-25 |
| 8674465 | MRAM device and integration techniques compatible with logic integration | Xia Li, Seung H. Kang | 2014-03-18 |
| 8665638 | MRAM sensing with magnetically annealed reference cell | Hari M. Rao | 2014-03-04 |
| 8625337 | Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements | Wenqing Wu, Kendrick Hoy Leong Yuen, Seung H. Kang, Matthew Michael Nowak, Jeffrey A. Levin +2 more | 2014-01-07 |
| 8625338 | Asymmetric write scheme for magnetic bit cell elements | Hari M. Rao, Jung Pill Kim, Seung H. Kang | 2014-01-07 |
| 8593173 | Programmable logic sensing in magnetic random access memory | Jung Pill Kim, Tae Hyun Kim, Wenqing Wu, Seung H. Kang | 2013-11-26 |
| 8592929 | Symmetrically switchable spin-transfer-torque magnetoresistive device | Wei-Chuan Chen, Kangho Lee, Seung H. Kang | 2013-11-26 |
| 8587993 | Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM) | Kangho Lee, Seung H. Kang | 2013-11-19 |
| 8587982 | Non-volatile memory array configurable for high performance and high density | Jung Pill Kim, Hari M. Rao, Xia Li, Seung H. Kang | 2013-11-19 |
| 8580583 | Magnetic tunnel junction device and fabrication | Kangho Lee, Xia Li, Seung H. Kang | 2013-11-12 |
| 8576617 | Circuit and method for generating a reference level for a magnetic random access memory element | Xia Li, Wenqing Wu, Jung Pill Kim, Seung H. Kang | 2013-11-05 |
| 8564080 | Magnetic storage element utilizing improved pinned layer stack | Wei-Chuan Chen, Seung H. Kang, Xia Li | 2013-10-22 |
| 8564079 | STT MRAM magnetic tunnel junction architecture and integration | Seung H. Kang, Xia Li, Shiqun Gu, Kangho Lee | 2013-10-22 |
| 8558331 | Magnetic tunnel junction device | Seung H. Kang, Xia Li, Kangho Lee | 2013-10-15 |
| 8547736 | Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction | Hari M. Rao, Jung Pill Kim, Seung H. Kang, Tae Hyun Kim, Kangho Lee +8 more | 2013-10-01 |
| 8536669 | Magnetic element with storage layer materials | Xia Li, Seung H. Kang | 2013-09-17 |
| 8513749 | Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction | Wei-Chuan Chen, Seung H. Kang | 2013-08-20 |
| 8488363 | Write energy conservation in memory | Hari M. Rao, Jung Pill Kim, Taehyun Kim, Kangho Lee, Wuyang Hao | 2013-07-16 |
| 8455267 | Magnetic tunnel junction device and fabrication | Xia Li, Seung H. Kang | 2013-06-04 |
| 8421137 | Magnetic random access memory | Xia Li, Seung H. Kang | 2013-04-16 |
| 8363459 | Magnetic tunnel junction device and fabrication | Seung H. Kang, Xia Li | 2013-01-29 |
| 8344433 | Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same | Matthew Michael Nowak, Xia Li, Seung H. Kang | 2013-01-01 |
| 8295082 | Gate level reconfigurable magnetic logic | Lew G. Chua-Eoan, Zhi Zhu | 2012-10-23 |
| 8248840 | Magnetoresistive random access memory (MRAM) with integrated magnetic film enhanced circuit elements | Xia Li, Seung H. Kang, Kangho Lee | 2012-08-21 |
| 8238143 | Magnetic tunnel junction device and fabrication | Kangho Lee, Xia Li, Seung H. Kang | 2012-08-07 |