Issued Patents All Time
Showing 51–75 of 87 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9230630 | Physically unclonable function based on the initial logical state of magnetoresistive random-access memory | Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Seung H. Kang +1 more | 2016-01-05 |
| 9224467 | Resistance-based memory having two-diode access device | Wuyang Hao, Jungwon Suh, Taehyun Kim, Jung Pill Kim, Seung H. Kang | 2015-12-29 |
| 9214214 | Physically unclonable function based on the random logical state of magnetoresistive random-access memory | Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Seung H. Kang +1 more | 2015-12-15 |
| 9214624 | Amorphous spacerlattice spacer for perpendicular MTJs | Wei-Chuan Chen, Seung H. Kang | 2015-12-15 |
| 9165631 | OTP scheme with multiple magnetic tunnel junction devices in a cell | Jung Pill Kim, Taehyun Kim, Sungryul Kim | 2015-10-20 |
| 9159910 | One-mask MTJ integration for STT MRAM | Seung H. Kang, David Bang | 2015-10-13 |
| 9142762 | Magnetic tunnel junction and method for fabricating a magnetic tunnel junction | Xia Li, Wei-Chuan Chen, Yu Lu, Chando Park, Seung H. Kang | 2015-09-22 |
| 9105340 | Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) | Seung H. Kang, Xiachun Zhu | 2015-08-11 |
| 9082962 | Magnetic Tunnel Junction (MTJ) on planarized electrode | Seung H. Kang, Xia Li, Wei-Chuan Chen, Xiaochun Zhu, Wah Nam Hsu | 2015-07-14 |
| 9064589 | Three port MTJ structure and integration | Xia Li, Xiaochun Zhu, Seung H. Kang, Jung Pill Kim, Wah Nam Hsu +1 more | 2015-06-23 |
| 9047964 | Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness | Taehyun Kim, Jung Pill Kim, Seung H. Kang | 2015-06-02 |
| 9043740 | Fabrication of a magnetic tunnel junction device | Xiaochun Zhu, Xia Li, Seung H. Kang | 2015-05-26 |
| 8969984 | Magnetic tunnel junction device | Xiaochun Zhu, Seung H. Kang, Xia Li | 2015-03-03 |
| 8923044 | MTP MTJ device | Xia Li, Jung Pill Kim, Taehyun Kim, Wah Nam Hsu, Seung H. Kang +3 more | 2014-12-30 |
| 8913423 | Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) | Seung H. Kang, Xiaochun Zhu | 2014-12-16 |
| 8797792 | Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction | Hari M. Rao, Jung Pil Kim, Seung H. Kang, Xiaochun Zhu, Tae Hyun Kim +8 more | 2014-08-05 |
| 8681536 | Magnetic tunnel junction (MTJ) on planarized electrode | Seung H. Kang, Xia Li, Wei-Chuan Chen, Xiaochun Zhu, Wah Nam Hsu | 2014-03-25 |
| 8638590 | Resistance based memory having two-diode access device | Wuyang Hao, Jungwon Suh, Tae Hyun Kim, Jung Pill Kim, Seung H. Kang | 2014-01-28 |
| 8614912 | Magnetic random access memory (MRAM)layout with uniform pattern | Taehyun Kim, Xia Li, Jung Pill Kim, Seung H. Kang | 2013-12-24 |
| 8592929 | Symmetrically switchable spin-transfer-torque magnetoresistive device | Wei-Chuan Chen, Xiaochun Zhu, Seung H. Kang | 2013-11-26 |
| 8587993 | Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM) | Seung H. Kang, Xiaochun Zhu | 2013-11-19 |
| 8580583 | Magnetic tunnel junction device and fabrication | Xiaochun Zhu, Xia Li, Seung H. Kang | 2013-11-12 |
| 8570797 | Magnetic random access memory (MRAM) read with reduced disturb failure | Jung Pill Kim, Tae Hyun Kim | 2013-10-29 |
| 8564079 | STT MRAM magnetic tunnel junction architecture and integration | Seung H. Kang, Xia Li, Shiqun Gu, Xiaochun Zhu | 2013-10-22 |
| 8558331 | Magnetic tunnel junction device | Xiaochun Zhu, Seung H. Kang, Xia Li | 2013-10-15 |