Issued Patents All Time
Showing 26–50 of 87 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9634237 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Chando Park, Seung H. Kang | 2017-04-25 |
| 9620706 | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device | Chando Park, Jimmy Jianan Kan, Matthias Georg Gottwald, Xiaochun Zhu, Seung H. Kang | 2017-04-11 |
| 9614147 | Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) | Chando Park, Seung H. Kang | 2017-04-04 |
| 9601687 | Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction | Chando Park, Seung H. Kang | 2017-03-21 |
| 9595917 | Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer | Jimmy Jianan Kan, Seung H. Kang | 2017-03-14 |
| 9595666 | Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials | Matthias Georg Gottwald, Jimmy Jianan Kan, Chando Park, Seung H. Kang | 2017-03-14 |
| 9589619 | Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy | Jimmy Jianan Kan, Seung H. Kang | 2017-03-07 |
| 9583931 | Busbar kit | — | 2017-02-28 |
| 9583696 | Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction | Matthias Georg Gottwald, Chando Park, Xiaochun Zhu, Seung H. Kang | 2017-02-28 |
| 9570509 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Yu Lu +1 more | 2017-02-14 |
| 9548446 | Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) | Chando Park, Matthias Georg Gottwald, Seung H. Kang | 2017-01-17 |
| 9548445 | Amorphous alloy space for perpendicular MTJs | Wei-Chuan Chen, Seung H. Kang | 2017-01-17 |
| 9547092 | Apparatus and method of detecting X-ray, and X-ray imaging system | Young Hwan Kim, Jaechul Park | 2017-01-17 |
| 9461094 | Switching film structure for magnetic random access memory (MRAM) cell | Xia Li, Wei-Chuan Chen, Yu Lu, Seung H. Kang | 2016-10-04 |
| 9455014 | Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems | Taehyun Kim, Sungryul Kim, Seung H. Kang, Jung Pill Kim | 2016-09-27 |
| 9444035 | Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication | Chando Park, Jimmy Jianan Kan, Matthias Georg Gottwald, Xiaochun Zhu, Seung H. Kang | 2016-09-13 |
| 9385309 | Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials | Matthias Georg Gottwald, Jimmy Jianan Kan, Chando Park, Seung H. Kang | 2016-07-05 |
| 9379314 | Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) | Chando Park, Seung H. Kang | 2016-06-28 |
| 9368715 | Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) | Seung H. Kang, Xiaochun Zhu | 2016-06-14 |
| 9368232 | Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control | Wah Nam Hsu, Xiao Lu, Seung H. Kang | 2016-06-14 |
| 9343135 | Physically unclonable function based on programming voltage of magnetoresistive random-access memory | Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Seung H. Kang +1 more | 2016-05-17 |
| 9324939 | Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ) | Chando Park, Matthias Georg Gottwald, Seung H. Kang | 2016-04-26 |
| 9298946 | Physically unclonable function based on breakdown voltage of metal-insulator-metal device | Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Seung H. Kang +1 more | 2016-03-29 |
| 9245610 | OTP cell with reversed MTJ connection | Jung Pill Kim, Taehyun Kim, Seung H. Kang, Xia Li, Wah Nam Hsu | 2016-01-26 |
| 9245608 | Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device | Wei-Chuan Chen, Xiaochun Zhu, Seung H. Kang | 2016-01-26 |