Issued Patents All Time
Showing 51–66 of 66 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9343357 | Selective conductive barrier layer formation | John Jianhong Zhu, Choh Fei Yeap | 2016-05-17 |
| 9306066 | Method and apparatus of stressed FIN NMOS FinFET | Choh Fei Yeap | 2016-04-05 |
| 9299840 | FinFETs and methods for forming the same | — | 2016-03-29 |
| 9257556 | Silicon germanium FinFET formation by Ge condensation | Vladimir Machkaoutsan, Kern Rim, Stanley Seungchul Song, Choh Fei Yeap | 2016-02-09 |
| 9240480 | Metal-oxide-semiconductor field-effect transistor with metal-insulator semiconductor contact structure to reduce Schottky barrier | — | 2016-01-19 |
| 9219152 | Semiconductor device with a buried stressor | Zhiqiang Wu, Chih-Hao Chang, Wen-Hsing Hsieh | 2015-12-22 |
| 9196583 | Via material selection and processing | John Jianhong Zhu, Stanley Seungchul Song, Kern Rim, Zhongze Wang | 2015-11-24 |
| 9165929 | Complementarily strained FinFET structure | Kern Rim, Stanley Seungchul Song | 2015-10-20 |
| 8927377 | Methods for forming FinFETs with self-aligned source/drain | Ziwei Fang, Ying Zhang | 2015-01-06 |
| 8853025 | FinFET/tri-gate channel doping for multiple threshold voltage tuning | Ying Zhang, Ziwei Fang | 2014-10-07 |
| 8809171 | Methods for forming FinFETs having multiple threshold voltages | Ying Zhang, Ziwei Fang | 2014-08-19 |
| 8703565 | Bottom-notched SiGe FinFET formation using condensation | Chih-Hao Chang, Chien-Hsun Wang, Chih-Hsiang Chang | 2014-04-22 |
| 8395195 | Bottom-notched SiGe FinFET formation using condensation | Chih-Hao Chang, Chien-Hsun Wang, Chih-Hsiang Chang | 2013-03-12 |
| 8338259 | Semiconductor device with a buried stressor | Zhiqiang Wu, Chih-Hao Chang, Wen-Hsing Hsieh | 2012-12-25 |
| 7892929 | Shallow trench isolation corner rounding | Neng-Kuo Chen, Kuo-Hwa Tzeng, Cheng-Yuan Tsai | 2011-02-22 |
| 7737554 | Pitch by splitting bottom metallization layer | — | 2010-06-15 |