Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for selective electroplating of semiconductor device I/O pads using a titanium-tungsten seed layer

Method for selective electroplating of semiconductor device I/O pads using a titanium-tungsten seed layer

US Patent 7144490 · Granted Dec 5, 2006

Estimated economic value: $6,328,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Photonics chip patterning with multiple photoresist layers2025
Actuator apparatus with light actuated position sensor and secure position verif2025
Bonding structure using two oxide layers with different stress levels, and relat2025
Self aligned pattern formation post spacer etchback in tight pitch configuration2024
Actuator apparatus with light actuated position sensor and secure position verif2024
Self aligned pattern formation post spacer etchback in tight pitch configuration2023
Multi-layered substrates of semiconductor devices2022
Multilayer pillar for reduced stress interconnect and method of making same2022
Manager special2021
Multilayer pillar for reduced stress interconnect and method of making same2021
Electrical fuse with metal line migration2021
Interconnect structure2021