Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors

Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors

US Patent 7034400 · Granted Apr 25, 2006

Estimated economic value: $9,745,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power module and manufacturing method thereof2025
Motor driving apparatus2025
Power module and motor drive system using the same2025
Field effect transistor with shallow trench isolation features within source/dra2025
Heterojunction bipolar transistor with buried trap rich isolation region2025
High electron mobility transistors having barrier liners and integration schemes2025
Semiconductor devices with single-photon avalanche diodes and isolation structur2025
Contact-over-active-gate transistor structures with contacts landed on enlarged 2025
Edge seals for semiconductor packages2025
Heterojunction bipolar transistor with buried trap rich isolation region2024
Field effect transistor2024
Power module and method of manufacturing the same2024