Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a silicon nitride layer on a substrate

Method of forming a silicon nitride layer on a substrate

US Patent 6645884 · Granted Nov 11, 2003

Estimated economic value: $43,459,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi-antenna unit for large area inductively coupled plasma processing apparatu2025
Film stress control for plasma enhanced chemical vapor deposition2025
Method and apparatus for powder removal in an additive manufacturing system2025
Printing method for additive manufacturing, including in-situ powder regeneratio2025
Film stress control for plasma enhanced chemical vapor deposition2023
ALD process and hardware with improved purge efficiency2023
Methods and apparatus for ALD processes2022
Apparatus and method for providing uniform flow of gas2022
Thin film deposition in a high aspect ratio feature2021
Film stress control for plasma enhanced chemical vapor deposition2021
ALD process and hardware with improved purge efficiency2021
High temperature process chamber lid2020