Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Interim oxidation of silsesquioxane dielectric for dual damascene process

Interim oxidation of silsesquioxane dielectric for dual damascene process

US Patent 6329280 · Granted Dec 11, 2001

Estimated economic value: $30,954,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Smart trim die assembly2024
Method to form air gap structure with dual dielectric layer2023
Manufacturing method for an artificially oriented piezoelectric film for integra2023
Multilayer pillar for reduced stress interconnect and method of making same2022
Multilayer pillar for reduced stress interconnect and method of making same2021
Dual dielectric layer for closing seam in air gap structure2021
Multilayer pillar for reduced stress interconnect and method of making same2021
Seal ring structure of integrated circuit and method of forming same2020
Time temperature monitoring system2019
Artificially oriented piezoelectric film for integrated filters2019
Through-silicon via with improved substrate contact for reduced through-silicon 2019
Arc-resistant crackstop2019