Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same

Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same

US Patent 11935784 · Granted Mar 19, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional memory device with laterally separated source select electrode2025
Three-dimensional memory device including composite backside metal fill structur2025
Three-dimensional memory device containing integrated contact-and-support assemb2025
Select gate bias gradation structure in NAND memory2025
Sub-block separation in NAND memory through word line based selectors2025
High aspect ratio via fill process employing selective metal deposition and stru2025
Semiconductor devices containing copper bonding pads with different conductive b2025
Semiconductor devices containing copper bonding pads with different conductive b2025
Bonded assembly including interconnect-level bonding pads and methods of forming2025
Bonded assembly including interconnect-level bonding pads and methods of forming2025
Bonded assembly containing conductive via structures extending through word line2025
Negative electrode active material, negative electrode and method for producing 2025