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Home › Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

US Patent 10840334 · Granted Nov 17, 2020

Estimated economic value: $21,672,000 ⓘ

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