Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

US Patent 10192980 · Granted Jan 29, 2019

Estimated economic value: $13,586,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Group III-nitride high-electron mobility transistors with gate connected buried 2025
Group III-nitride high-electron mobility transistors with buried p-type layers a2025
Group III-nitride high-electron mobility transistors with buried p-type layers a2025
Group III-nitride high-electron mobility transistors with buried p-type layers a2025
Circuits and group III-nitride transistors with buried p-layers and controlled g2025
Field effect transistor with selective channel layer doping2025
Group III-nitride high-electron mobility transistors with a buried metallic cond2025
Gallium Nitride high-electron mobility transistors with p-type layers and proces2024
Semiconductor devices having unit cell transistors with smoothed turn-on behavio2024
Circuits and group III-nitride high-electron mobility transistors with buried p-2024
Group III-nitride high-electron mobility transistors with buried p-type layers a2024
Group III-nitride high-electron mobility transistors with buried p-type layers a2024