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Home › Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor

Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor

US Patent 10049921 · Granted Aug 14, 2018

Estimated economic value: $33,763,000 ⓘ

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