KI

Ken Inoue

NE Nec: 15 patents #768 of 14,502Top 6%
IBM: 13 patents #8,581 of 70,183Top 15%
SE Seiko Epson: 11 patents #1,668 of 7,774Top 25%
RE Renesas Electronics: 9 patents #397 of 4,529Top 9%
NE Nec Electronics: 9 patents #47 of 1,789Top 3%
SK Showa Denko K.K.: 4 patents #353 of 1,736Top 25%
YE Yokogawa Electric: 3 patents #261 of 1,441Top 20%
DC Dowa Electronics Materials Co.: 3 patents #68 of 241Top 30%
HI Hitachi: 3 patents #10,712 of 28,497Top 40%
KS Kobe Steel: 2 patents #504 of 2,031Top 25%
TU Tohoku University: 1 patents #615 of 1,680Top 40%
TL Tokyo Electron Limited: 1 patents #3,538 of 5,567Top 65%
DC Dowa Mining Co.: 1 patents #157 of 324Top 50%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
📍 Shiojiri, NY: #1 of 2 inventorsTop 50%
Overall (All Time): #26,038 of 4,157,543Top 1%
74
Patents All Time

Issued Patents All Time

Showing 51–74 of 74 patents

Patent #TitleCo-InventorsDate
6825889 Liquid crystal device with an offset toward a clear viewing direction and projection type display device using the liquid crystal device Hiromi Saito 2004-11-30
6815281 Method of manufacturing a semiconductor device having a memory cell section and an adjacent circuit section Masayuki Hamada 2004-11-09
6673674 Method of manufacturing a semiconductor device having a T-shaped floating gate Hiroshi Sugawara 2004-01-06
6569766 Method for forming a silicide of metal with a high melting point in a semiconductor device Nobuaki Hamanaka, Kaoru Mikagi 2003-05-27
6548421 Method for forming a refractory-metal-silicide layer in a semiconductor device Nobuaki Hamanaka, Kaoru Mikagi 2003-04-15
6316362 Method for manufacturing semiconductor device 2001-11-13
6309515 Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal Hitoshi Abiko, Minoru Higuchi 2001-10-30
6232224 Method of manufacturing semiconductor device having reliable contact structure 2001-05-15
6221764 Manufacturing method of semiconductor device 2001-04-24
6211059 Method of manufacturing semiconductor device having contacts with different depths Masayuki Hamada 2001-04-03
6136699 Method of manufacturing semiconductor device using phase transition 2000-10-24
6114765 C49-structured tungsten-containing titanium salicide structure and method of forming the same Kunihiro Fujii, Kuniko Miyakawa, Kaoru Mikagi 2000-09-05
6084215 Semiconductor wafer holder with spring-mounted temperature measurement apparatus disposed therein Kunihiro Furuya, Toshihiro Yonezawa, Yoichi NAKAGOMI 2000-07-04
6069045 Method of forming C49-structure tungsten-containing titanium salicide structure Kunihiro Fujii, Kuniko Miyakawa, Kaoru Mikagi 2000-05-30
5950083 Method for fabricating CMOS transistor with self-aligned silicide (salicide) structure Makoto Sekine 1999-09-07
5937300 Semiconductor apparatus and fabrication method thereof Makoto Sekine, Hidenobu Miyamoto 1999-08-10
5880505 C49-structured tungsten-containing titanium salicide structure Kunihiro Fujii, Kuniko Miyakawa, Kaoru Mikagi 1999-03-09
5780361 Salicide process for selectively forming a monocobalt disilicide film on a silicon region 1998-07-14
5768568 System and method for initializing an information processing system Takashi Inui, Kazumi Itoh 1998-06-16
5741725 Fabrication process for semiconductor device having MOS type field effect transistor Kunihiro Fujii 1998-04-21
5661052 Method of fabricating semiconductor device having low-resistance gate electrode and diffusion layers Makoto Sekine, Hirohito Watanabe, Ichirou Honma 1997-08-26
5497490 Automatic reconfiguration of alterable systems Naoki Harada, Masahiko Shinomura 1996-03-05
5280252 Charged particle accelerator Akira Kobayashi, Takuya Kusaka, Yutaka Kawata, Kouji Inoue, Kiyotaka Ishibashi +4 more 1994-01-18
5063294 Converged ion beam apparatus Yutaka Kawata, Kiyotaka Ishibashi, Akira Kobayashi, Koji Inoue, Norio Suzuki +8 more 1991-11-05