Issued Patents All Time
Showing 25 most recent of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7793818 | Semiconductor device, manufacturing method and apparatus for the same | Masamoto Tago, Tomohiro Nishiyama, Tetuya Tao | 2010-09-14 |
| 7611041 | Semiconductor device, manufacturing method and apparatus for the same | Masamoto Tago, Tomohiro Nishiyama, Tetuya Tao | 2009-11-03 |
| 7560372 | Process for making a semiconductor device having a roughened surface | Hiroaki Tomimori, Hidemitsu Aoki, Akira Furuya, Tetsuya Tao | 2009-07-14 |
| 7282432 | Semiconductor device, manufacturing method and apparatus for the same | Masamoto Tago, Tomohiro Nishiyama, Tetuya Tao | 2007-10-16 |
| 7170172 | Semiconductor device having a roughened surface | Hiroaki Tomimori, Hidemitsu Aoki, Akira Furuya, Tetsuya Tao | 2007-01-30 |
| 6989328 | Method of manufacturing semiconductor device having damascene interconnection | Koji Arita, Ryohei Kitao | 2006-01-24 |
| 6969915 | Semiconductor device, manufacturing method and apparatus for the same | Masamoto Tago, Tomohiro Nishiyama, Tetuya Tao | 2005-11-29 |
| 6569766 | Method for forming a silicide of metal with a high melting point in a semiconductor device | Nobuaki Hamanaka, Ken Inoue | 2003-05-27 |
| 6566254 | Method for forming a silicide film on gate electrodes and diffusion layers of MOS transistors | — | 2003-05-20 |
| 6548421 | Method for forming a refractory-metal-silicide layer in a semiconductor device | Nobuaki Hamanaka, Ken Inoue | 2003-04-15 |
| 6413807 | Semiconductor device having silicide films on a gate electrode and a diffusion layer and manufacturing method thereof | — | 2002-07-02 |
| 6383911 | Semiconductor device and method for making the same | — | 2002-05-07 |
| 6284662 | Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation process | — | 2001-09-04 |
| 6274923 | Semiconductor device and method for making the same | — | 2001-08-14 |
| 6274932 | Semiconductor device having metal interconnection comprising metal silicide and four conductive layers | — | 2001-08-14 |
| 6232227 | Method for making semiconductor device | — | 2001-05-15 |
| 6153507 | Method of fabricating semiconductor device providing effective resistance against metal layer oxidation and diffusion | — | 2000-11-28 |
| 6114765 | C49-structured tungsten-containing titanium salicide structure and method of forming the same | Kunihiro Fujii, Ken Inoue, Kuniko Miyakawa | 2000-09-05 |
| 6107096 | Method of fabricating a salicide-structured MOS semiconductor device having a cobalt disilicied film | — | 2000-08-22 |
| 6069045 | Method of forming C49-structure tungsten-containing titanium salicide structure | Kunihiro Fujii, Ken Inoue, Kuniko Miyakawa | 2000-05-30 |
| 5899720 | Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction | — | 1999-05-04 |
| 5880505 | C49-structured tungsten-containing titanium salicide structure | Kunihiro Fujii, Ken Inoue, Kuniko Miyakawa | 1999-03-09 |
| 5751067 | Compact semiconductor device having excellent electrical characteristics and long time reliability | — | 1998-05-12 |
| 5595937 | Method for fabricating semiconductor device with interconnections buried in trenches | — | 1997-01-21 |
| 5539256 | Semiconductor device having an interconnection of a laminate structure and a method for manufacturing the same | — | 1996-07-23 |