TS

Teruo Shibano

Mitsubishi Electric: 13 patents #2,044 of 25,717Top 8%
📍 Itami, JP: #245 of 1,436 inventorsTop 20%
Overall (All Time): #388,659 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
6885726 Fluorescent X-ray analysis apparatus Yasushi Uehara 2005-04-26
6420191 Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium Takeharu Kuroiwa, Tsuyoshi Horikawa, Tetsuro Makita, Noboru Mikami 2002-07-16
6239460 Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium Takeharu Kuroiwa, Tsuyoshi Horikawa, Tetsuro Makita, Noboru Mikami 2001-05-29
6165556 High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film Takaaki Kawahara, Mikio Yamamuka, Tetsuro Makita, Tsuyoshi Horikawa, Akimasa Yuuki 2000-12-26
6101085 High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film Takaaki Kawahara, Mikio Yamamuka, Tetsuro Makita, Tsuyoshi Horikawa, Akimasa Yuuki 2000-08-08
6015989 Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen Tsuyosi Horikawa, Tetsuro Makita, Takeharu Kuroiwa, Noboru Mikami 2000-01-18
5989635 High dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin film Takaaki Kawahara, Mikio Yamamuka, Tetsuro Makita, Tsuyoshi Horikawa, Akimasa Yuuki 1999-11-23
5882410 High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film Takaaki Kawahara, Mikio Yamamuka, Tetsuro Makita, Tsuyoshi Horikawa, Akimasa Yuuki 1999-03-16
5834060 High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film Takaaki Kawahara, Mikio Yamamuka, Tetsuro Makita, Tsuyoshi Horikawa, Akimasa Yuuki 1998-11-10
5304775 Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element Nobuo Fujiwara, Kyusaku Nishioka 1994-04-19
4982138 Semiconductor wafer treating device utilizing a plasma Nobuo Fujiwara, Kenji Kawai, Moriaki Akazawa, Tomoaki Ishida, Kyusaku Nishioka 1991-01-01
4915979 Semiconductor wafer treating device utilizing ECR plasma Tomoaki Ishida, Nobuo Fujiwara, Kyusaku Nishioka, Moriaki Akazawa, Kenji Kawai 1990-04-10
4877509 Semiconductor wafer treating apparatus utilizing a plasma Toshiaki Ogawa, Nobuo Fujiwara, Kenji Kawai, Hiroshi Morita, Kyusaku Nishioka 1989-10-31