WL

Weimin Li

Micron: 72 patents #218 of 6,345Top 4%
ZT Zte: 27 patents #102 of 3,593Top 3%
EN Entegris: 8 patents #75 of 643Top 15%
Applied Materials: 5 patents #2,165 of 7,310Top 30%
XC Xi'An Zhongxing New Software Co.: 4 patents #68 of 714Top 10%
AC Advanced Technology & Materials Co.: 4 patents #103 of 410Top 30%
Huawei: 3 patents #4,041 of 15,535Top 30%
Johnson & Johnson: 2 patents #3,442 of 7,810Top 45%
WU West China Hospital, Sichuan University: 2 patents #9 of 92Top 10%
3C 3Com: 1 patents #653 of 1,190Top 55%
GC Genius Electronic Optical (Xiamen) Co.: 1 patents #80 of 115Top 70%
MI Mosaid Technologies Incorporated: 1 patents #115 of 170Top 70%
CC Cdgm Glass Co.: 1 patents #11 of 28Top 40%
📍 Lo Wu, CT: #1 of 12 inventorsTop 9%
Overall (All Time): #7,435 of 4,157,543Top 1%
137
Patents All Time

Issued Patents All Time

Showing 76–100 of 137 patents

Patent #TitleCo-InventorsDate
7298024 Transparent amorphous carbon structure in semiconductor devices Zhiping Yin, David Williams 2007-11-20
7279118 Compositions of matter and barrier layer compositions Zhiping Yin 2007-10-09
7273793 Methods of filling gaps using high density plasma chemical vapor deposition Neal R. Rueger, William Budge, Gurtej S. Sandhu 2007-09-25
7259079 Methods for filling high aspect ratio trenches in semiconductor layers Jingyi Bai, William Budge 2007-08-21
7253076 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Mark Visokay, Cem Basceri +1 more 2007-08-07
7235499 Semiconductor processing methods John Qiang Li 2007-06-26
7220683 Transparent amorphous carbon structure in semiconductor devices Zhiping Yin, David Williams 2007-05-22
7214618 Technique for high efficiency metalorganic chemical vapor deposition Sam Yang 2007-05-08
7205248 Method of eliminating residual carbon from flowable oxide fill Li Li 2007-04-17
7202183 Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition Neal R. Rueger, William Budge, Gurtej S. Sandhu 2007-04-10
7186638 Passivation processes for use with metallization techniques 2007-03-06
7132201 Transparent amorphous carbon structure in semiconductor devices Zhiping Yin 2006-11-07
7129180 Masking structure having multiple layers including an amorphous carbon layer Gurtej S. Sandhu, Zhiping Yin 2006-10-31
7078356 Low K interlevel dielectric layer fabrication methods Zhiping Yin, William Budge 2006-07-18
7067415 Low k interlevel dielectric layer fabrication methods Zhiping Yin, William Budge 2006-06-27
7067414 Low k interlevel dielectric layer fabrication methods Zhiping Yin, William Budge 2006-06-27
7060637 Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials Gurtej S. Sandhu 2006-06-13
7056833 Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition Neal R. Rueger, William Budge, Gurtej S. Sandhu 2006-06-06
7053010 Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells Gurtej S. Sandhu 2006-05-30
7018469 Atomic layer deposition methods of forming silicon dioxide comprising layers Li Li, Gurtej S. Sandhu 2006-03-28
7008885 Chemical treatment of semiconductor substrates Li Li 2006-03-07
6982207 Methods for filling high aspect ratio trenches in semiconductor layers Jingyi Bai, William Budge 2006-01-03
6951709 Method of fabricating a semiconductor multilevel interconnect structure 2005-10-04
6936547 Gas delivery system for deposition processes, and methods of using same Neal R. Rueger, Li Li, Ross S. Dando, Kevin Hamer, Allen Mardian 2005-08-30
6930058 Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge Chris Hill, Gurtej S. Sandhu 2005-08-16