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Chris Hill — 27 Patents

Micron: 27 patents #694 of 6,374Top 15%

Boise, ID: #379 of 3,546 inventorsTop 15%

Idaho: #533 of 8,810 inventorsTop 7%

Overall (All Time): #142,059 of 4,157,543Top 4%

27 Patents All Time

Chris Hill has been granted 27 US patents while listed as an inventor at Micron. The first was granted in 2000 and the most recent in June 2013. Chris Hill ranks #142,059 of 4,157,543 US inventors in our database (top 3.4%). Patent records list Chris Hill in Boise, ID, US.

Patents per Year

Issued Patents All Time

Showing 1–25 of 27 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
8470686	Method of increasing deposition rate of silicon dioxide on a catalyst	Garo Derderian	2013-06-25	$5,511,000
8158488	Method of increasing deposition rate of silicon dioxide on a catalyst	Garo Derderian	2012-04-17	$4,333,000
8153502	Methods for filling trenches in a semiconductor material	Li Li, Ronald A. Weimer, Richard L. Stocks	2012-04-10	$5,468,000
8110891	Method of increasing deposition rate of silicon dioxide on a catalyst	Garo Derderian	2012-02-07	$6,950,000
7667258	Double-sided container capacitors using a sacrificial layer	Gurtej S. Sandhu, Kevin R. Shea, Kevin J. Torek	2010-02-23	$4,787,000
7470632	Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge	Weimin Li, Gurtej S. Sandhu	2008-12-30	$1,350,000
7429541	Method of forming trench isolation in the fabrication of integrated circuitry	Garo Derderian	2008-09-30	$4,438,000
7361614	Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry	Garo Derderian	2008-04-22	$3,044,000
7329576	Double-sided container capacitors using a sacrificial layer	Gurtej S. Sandhu, Kevin R. Shea, Kevin J. Torek	2008-02-12	$1,579,000
7250378	Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry	Garo Derderian	2007-07-31	$2,221,000
7250380	Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry	Garo Derderian	2007-07-31	$2,221,000
7157385	Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry	Garo Derderian	2007-01-02
6982228	Methods of etching a contact opening over a node location on a semiconductor substrate	Mark E. Jost	2006-01-03	$1,955,000
6940171	Multi-layer dielectric and method of forming same	—	2005-09-06	$1,346,000
6930058	Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge	Weimin Li, Gurtej S. Sandhu	2005-08-16	$1,281,000
6905956	Multi-layer dielectric and method of forming same	—	2005-06-14	$1,402,000
6828252	Method of etching a contact opening	Mark E. Jost	2004-12-07	$1,817,000
6787877	Method for filling structural gaps and integrated circuitry	—	2004-09-07	$988,000
6596641	Chemical vapor deposition methods	Mark E. Jost	2003-07-22	$3,963,000
6500730	Method for filling structural gaps and integrated circuitry	—	2002-12-31	$3,585,000
6433378	Integrated circuits having material within structural gaps	—	2002-08-13	$4,267,000
6384466	Multi-layer dielectric and method of forming same	—	2002-05-07	$4,698,000
6306766	Method of forming a crystalline phase material, electrically conductive line and refractory metal silicide	Gurtej S. Sandhu, Sujit Sharan	2001-10-23	$6,015,000
6175155	Selectively formed contact structure	—	2001-01-16	$15,360,000
6171948	Method for filling structural gaps and intergrated circuitry	—	2001-01-09	$18,527,000