CH

Chris Hill

Micron: 27 patents #675 of 6,345Top 15%
Overall (All Time): #147,403 of 4,157,543Top 4%
27
Patents All Time

Issued Patents All Time

Showing 25 most recent of 27 patents

Patent #TitleCo-InventorsDate
8470686 Method of increasing deposition rate of silicon dioxide on a catalyst Garo Derderian 2013-06-25
8158488 Method of increasing deposition rate of silicon dioxide on a catalyst Garo Derderian 2012-04-17
8153502 Methods for filling trenches in a semiconductor material Li Li, Ronald A. Weimer, Richard L. Stocks 2012-04-10
8110891 Method of increasing deposition rate of silicon dioxide on a catalyst Garo Derderian 2012-02-07
7667258 Double-sided container capacitors using a sacrificial layer Gurtej S. Sandhu, Kevin R. Shea, Kevin J. Torek 2010-02-23
7470632 Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge Weimin Li, Gurtej S. Sandhu 2008-12-30
7429541 Method of forming trench isolation in the fabrication of integrated circuitry Garo Derderian 2008-09-30
7361614 Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry Garo Derderian 2008-04-22
7329576 Double-sided container capacitors using a sacrificial layer Gurtej S. Sandhu, Kevin R. Shea, Kevin J. Torek 2008-02-12
7250378 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry Garo Derderian 2007-07-31
7250380 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry Garo Derderian 2007-07-31
7157385 Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry Garo Derderian 2007-01-02
6982228 Methods of etching a contact opening over a node location on a semiconductor substrate Mark E. Jost 2006-01-03
6940171 Multi-layer dielectric and method of forming same 2005-09-06
6930058 Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge Weimin Li, Gurtej S. Sandhu 2005-08-16
6905956 Multi-layer dielectric and method of forming same 2005-06-14
6828252 Method of etching a contact opening Mark E. Jost 2004-12-07
6787877 Method for filling structural gaps and integrated circuitry 2004-09-07
6596641 Chemical vapor deposition methods Mark E. Jost 2003-07-22
6500730 Method for filling structural gaps and integrated circuitry 2002-12-31
6433378 Integrated circuits having material within structural gaps 2002-08-13
6384466 Multi-layer dielectric and method of forming same 2002-05-07
6306766 Method of forming a crystalline phase material, electrically conductive line and refractory metal silicide Gurtej S. Sandhu, Sujit Sharan 2001-10-23
6175155 Selectively formed contact structure 2001-01-16
6171948 Method for filling structural gaps and intergrated circuitry 2001-01-09