{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method for filling structural gaps and integrated circuitry", "item": "https://www.patentleaderboard.com/patent/6500730"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for filling structural gaps and integrated circuitry

Method for filling structural gaps and integrated circuitry

US Patent 6500730 · Granted Dec 31, 2002

Estimated economic value: $3,585,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of increasing deposition rate of silicon dioxide on a catalyst2013
Method of increasing deposition rate of silicon dioxide on a catalyst2012
Methods for filling trenches in a semiconductor material2012
Method of increasing deposition rate of silicon dioxide on a catalyst2012
Double-sided container capacitors using a sacrificial layer2010
Method of depositing a silicon dioxide comprising layer doped with at least one 2008
Method of forming trench isolation in the fabrication of integrated circuitry2008
Method of depositing a silicon dioxide comprising layer in the fabrication of in2008
Double-sided container capacitors using a sacrificial layer2008
Method of depositing a silicon dioxide-comprising layer in the fabrication of in2007
Method of depositing a silicon dioxide-comprising layer in the fabrication of in2007
Method of depositing a silicon dioxide-comprising layer in the fabrication of in2007