Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
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Sam Yang — 30 Patents

Micron: 28 patents #678 of 6,374Top 15%
Los Alamitos, CA: #2 of 190 inventorsTop 2%
California: #17,345 of 386,348 inventorsTop 5%
Overall (All Time): #121,623 of 4,157,543Top 3%
30 Patents All Time
Sam Yang has been granted 30 US patents while listed as an inventor at Micron. The first was granted in 1999 and the most recent in September 2020. Sam Yang ranks #121,623 of 4,157,543 US inventors in our database (top 2.9%). Patent records list Sam Yang in Los Alamitos, CA, US.

Issued Patents All Time

Showing 1–25 of 30 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
10774448 Method of manufacturing a fabric 2020-09-15
8470665 Low leakage MIM capacitor 2013-06-25 $5,511,000
8441077 Method for forming a ruthenium metal layer and a structure comprising the ruthenium metal layer 2013-05-14 $3,687,000
7435641 Low leakage MIM capacitor 2008-10-14 $1,624,000
7378719 Low leakage MIM capacitor 2008-05-27 $2,289,000
7368343 Low leakage MIM capacitor 2008-05-06 $1,255,000
7253076 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Weimin Li, Mark Visokay +1 more 2007-08-07 $1,952,000
7214618 Technique for high efficiency metalorganic chemical vapor deposition Weimin Li 2007-05-08 $1,698,000
7192828 Capacitor with high dielectric constant materials and method of making Cem Basceri, Gurtej S. Sandhu 2007-03-20 $2,361,000
7053462 Planarization of metal container structures John M. Drynan 2006-05-30 $2,322,000
7018675 Method for forming a ruthenium metal layer 2006-03-28 $1,931,000
7015527 Metal oxynitride capacitor barrier layer Vishnu K. Agarwal 2006-03-21 $2,245,000
7002202 Metal oxynitride capacitor barrier layer Vishnu K. Agarwal 2006-02-21 $2,924,000
6921710 Technique for high efficiency metalorganic chemical vapor deposition Weimin Li 2005-07-26 $1,779,000
6833576 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Weimin Li, Mark Visokay +1 more 2004-12-21 $2,011,000
6803621 Oxygen barrier for cell container process Lingyi A. Zheng 2004-10-12 $2,459,000
6746930 Oxygen barrier for cell container process Lingyi A. Zheng 2004-06-08 $2,376,000
6727140 Capacitor with high dielectric constant materials and method of making Cem Basceri, Gurtej S. Sandhu 2004-04-27 $2,268,000
6676756 Technique for high efficiency metalorganic chemical vapor deposition Weimin Li 2004-01-13 $2,653,000
6670256 Metal oxynitride capacitor barrier layer Vishnu K. Agarwal 2003-12-30 $2,987,000
6664584 Metal oxynitride capacitor barrier layer Vishnu Kumar Agrawal 2003-12-16 $2,294,000
6664583 Metal oxynitride capacitor barrier layer Vishnu K. Agarwal 2003-12-16 $2,294,000
6631069 Metal oxynitride capacitor barrier layer Vishnu K. Agarwal 2003-10-07 $3,475,000
6617248 Method for forming a ruthenium metal layer 2003-09-09 $3,971,000
6596583 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Vishnu K. Agarwal, Garo Derderian, Gurtej S. Sandhu, Weimin Li, Mark Visokay +1 more 2003-07-22 $3,963,000