WB

William Budge

Micron: 20 patents #865 of 6,345Top 15%
Overall (All Time): #211,175 of 4,157,543Top 6%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7632737 Protection in integrated circuits Neal R. Rueger, Weimin Li 2009-12-15
7521354 Low k interlevel dielectric layer fabrication methods Weimin Li, Zhiping Yin 2009-04-21
7501691 Trench insulation structures including an oxide liner and oxidation barrier John Smythe 2009-03-10
7494894 Protection in integrated circuits Neal R. Rueger, Weimin Li 2009-02-24
7479440 Method of forming an isolation structure that includes forming a silicon layer at a base of the recess John Smythe 2009-01-20
7273793 Methods of filling gaps using high density plasma chemical vapor deposition Neal R. Rueger, Weimin Li, Gurtej S. Sandhu 2007-09-25
7271463 Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base John Smythe 2007-09-18
7259079 Methods for filling high aspect ratio trenches in semiconductor layers Jingyi Bai, Weimin Li 2007-08-21
7219114 Fast approximation to the spherical linear interpolation function 2007-05-15
7214979 Selectively deposited silicon oxide layers on a silicon substrate Gurtej S. Sandhu, Christopher W. Hill 2007-05-08
7202183 Method of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition Neal R. Rueger, Weimin Li, Gurtej S. Sandhu 2007-04-10
7192893 Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off Gurtej S. Sandhu, Christopher W. Hill 2007-03-20
7078356 Low K interlevel dielectric layer fabrication methods Weimin Li, Zhiping Yin 2006-07-18
7067414 Low k interlevel dielectric layer fabrication methods Weimin Li, Zhiping Yin 2006-06-27
7067415 Low k interlevel dielectric layer fabrication methods Weimin Li, Zhiping Yin 2006-06-27
7056833 Methods of filling gaps and methods of depositing materials using high density plasma chemical vapor deposition Neal R. Rueger, Weimin Li, Gurtej S. Sandhu 2006-06-06
6982207 Methods for filling high aspect ratio trenches in semiconductor layers Jingyi Bai, Weimin Li 2006-01-03
6617230 Use of selective ozone teos oxide to create variable thickness layers and spacers Gurtej S. Sandhu, Christopher W. Hill 2003-09-09
6602807 Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off Gurtej S. Sandhu, Christopher W. Hill 2003-08-05
6503851 Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off Gurtej S. Sandhu, Christopher W. Hill 2003-01-07
6368986 Use of selective ozone TEOS oxide to create variable thickness layers and spacers Gurtej S. Sandhu, Christopher W. Hill 2002-04-09