{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method of forming an isolation structure that includes forming a silicon layer at a base of the recess", "item": "https://www.patentleaderboard.com/patent/7479440"}]}
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Home › Method of forming an isolation structure that includes forming a silicon layer at a base of the recess

Method of forming an isolation structure that includes forming a silicon layer at a base of the recess

US Patent 7479440 · Granted Jan 20, 2009

Estimated economic value: $3,797,000 ⓘ

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