CH

Christopher W. Hill

Micron: 21 patents #832 of 6,345Top 15%
IL Inmos Limited: 1 patents #44 of 90Top 50%
Overall (All Time): #198,042 of 4,157,543Top 5%
22
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7858518 Method for forming a selective contact and local interconnect in situ Weimin Li, Gurtej S. Sandhu 2010-12-28
7846812 Methods of forming trench isolation and methods of forming floating gate transistors — 2010-12-07
7737047 Semiconductor constructions, and methods of forming dielectric materials — 2010-06-15
7611971 Method of removing residual contaminants from an environment Demetrius Sarigiannis, Cem Basceri, Garo Derderian 2009-11-03
7402533 Masking without photolithography during the formation of a semiconductor device — 2008-07-22
7271050 Silicon nanocrystal capacitor and process for forming same — 2007-09-18
7247561 Method of removing residual contaminants from an environment Demetrius Sarigiannis, Cem Basceri, Garo Derderian 2007-07-24
7214979 Selectively deposited silicon oxide layers on a silicon substrate William Budge, Gurtej S. Sandhu 2007-05-08
7192893 Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off William Budge, Gurtej S. Sandhu 2007-03-20
7173304 Method of manufacturing devices comprising conductive nano-dots, and devices comprising same Ronald A. Weimer 2007-02-06
7101814 Masking without photolithography during the formation of a semiconductor device — 2006-09-05
6924969 Silicon nanocrystal capacitor and process for forming same — 2005-08-02
6808983 Silicon nanocrystal capacitor and process for forming same — 2004-10-26
6777351 Masking without photolithography during the formation of a semiconductor device — 2004-08-17
6617230 Use of selective ozone teos oxide to create variable thickness layers and spacers William Budge, Gurtej S. Sandhu 2003-09-09
6602807 Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off William Budge, Gurtej S. Sandhu 2003-08-05
6503851 Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off William Budge, Gurtej S. Sandhu 2003-01-07
6372643 Method for forming a selective contact and local interconnect in situ and semiconductor devices carrying the same Weimin Li, Gurtej S. Sandhu 2002-04-16
6368986 Use of selective ozone TEOS oxide to create variable thickness layers and spacers William Budge, Gurtej S. Sandhu 2002-04-09
6198144 Passivation of sidewalls of a word line stack Pai-Hung Pan, Martin C. Roberts, Gurtei Sandhu, Weimin Li, Vishnu K. Agarwal 2001-03-06
5960303 Process of forming titanium silicide interconnects — 1999-09-28
4784973 Semiconductor contact silicide/nitride process with control for silicide thickness E. Henry Stevens, Paul J. McClure 1988-11-15