Issued Patents All Time
Showing 101–125 of 303 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7166875 | Vertical diode structures | Fernando Gonzalez, Trung T. Doan, Raymond A. Turi, Graham R. Wolstenholme | 2007-01-23 |
| 7157304 | Single level metal memory cell using chalcogenide cladding | Manzur Gill | 2007-01-02 |
| 7092286 | Electrically programmable memory element with reduced area of contact | Stephen J. Hudgens, Patrick Klersy | 2006-08-15 |
| 7049623 | Vertical elevated pore phase change memory | — | 2006-05-23 |
| 7049238 | Method for fabricating semiconductor device having recess | Trung T. Doan | 2006-05-23 |
| 7045834 | Memory cell arrays | Luan C. Tran, D. Mark Duncan, Rob B. Kerr, Kris K. Brown | 2006-05-16 |
| 7009298 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | Gurtej S. Sandhu, Trung T. Doan | 2006-03-07 |
| 6998289 | Multiple layer phase-change memory | Stephen J. Hudgens, Patrick Klersy | 2006-02-14 |
| 6995059 | Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions | Luan C. Tran, Alan R. Reinberg, Mark Durcan | 2006-02-07 |
| 6989580 | Process for manufacturing an array of cells including selection bipolar junction transistors | Fabio Pellizzer, Giulio Casagrande, Roberto Gastaldi, Loris Vendrame, Augusto Benvenuti | 2006-01-24 |
| 6987688 | Die customization using programmable resistance memory elements | Guy Wicker | 2006-01-17 |
| 6969866 | Electrically programmable memory element with improved contacts | Stanford R. Ovshinsky, Guy Wicker, Patrick Klersy, Boil Pashmakov, Wolodymyr Czubatyj +1 more | 2005-11-29 |
| 6961258 | Pore structure for programmable device | — | 2005-11-01 |
| 6953743 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | Gurtej S. Sandhu, Trung T. Doan | 2005-10-11 |
| 6943365 | Electrically programmable memory element with reduced area of contact and method for making same | Stephen J. Hudgens, Patrick Klersy | 2005-09-13 |
| 6927093 | Method for making programmable resistance memory element | Patrick Klersy, Stephen J. Hudgens, Jon Maimon | 2005-08-09 |
| 6919578 | Utilizing atomic layer deposition for programmable device | Charles H. Dennison | 2005-07-19 |
| 6917052 | Modified contact for programmable devices | Stephen J. Hudgens | 2005-07-12 |
| 6914801 | Method of eliminating drift in phase-change memory | Sergey Kostylev, Wolodymyr Czubatyj | 2005-07-05 |
| 6914310 | Semiconductor isolator system | Trung T. Doan | 2005-07-05 |
| 6914255 | Phase change access device for memories | — | 2005-07-05 |
| 6912146 | Using an MOS select gate for a phase change memory | Manzur Gill | 2005-06-28 |
| 6908812 | Phase change material memory device | — | 2005-06-21 |
| 6903401 | Semiconductor devices with conductive lines that are laterally offset relative to corresponding contacts | — | 2005-06-07 |
| 6903010 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | Gurtej S. Sandhu, Trung T. Doan | 2005-06-07 |