Issued Patents All Time
Showing 51–71 of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6649968 | Flash memory cells | — | 2003-11-18 |
| 6624022 | Method of forming FLASH memory | Kelly Hurley | 2003-09-23 |
| 6429449 | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell | Fernando Gonzalez, Raymond A. Turi, Charles L. Ingalls | 2002-08-06 |
| 6406959 | Method of forming FLASH memory, method of forming FLASH memory and SRAM circuitry, and etching methods | Kirk D. Prall, Gregg Rettschlag | 2002-06-18 |
| 6236059 | Memory cell incorporating a chalcogenide element and method of making same | Fernando Gonzalez, Russell C. Zahorik | 2001-05-22 |
| 6194746 | Vertical diode structures with low series resistance | Fernando Gonzalez, Tyler Lowrey, Trung T. Doan, Raymond A. Turi | 2001-02-27 |
| 6153890 | Memory cell incorporating a chalcogenide element | Fernando Gonzalez, Russell C. Zahorik | 2000-11-28 |
| 6118135 | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell | Fernando Gonzalez, Raymond A. Turi, Charles L. Ingalls | 2000-09-12 |
| 6111264 | Small pores defined by a disposable internal spacer for use in chalcogenide memories | Steven T. Harshfield, Raymond A. Turi, Fernando Gonzalez, Guy T. Blalock, Donwon Park | 2000-08-29 |
| 5998244 | Memory cell incorporating a chalcogenide element and method of making same | Fernando Gonzalez, Russell C. Zahorik | 1999-12-07 |
| 5985698 | Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell | Fernando Gonzalez, Raymond A. Turi, Charles L. Ingalls | 1999-11-16 |
| 5970336 | Method of making memory cell incorporating a chalcogenide element | Fernando Gonzalez, Russell C. Zahorik | 1999-10-19 |
| 5854102 | Vertical diode structures with low series resistance | Fernando Gonzalez, Tyler Lowrey, Trung T. Doan, Raymond A. Turi | 1998-12-29 |
| 5831276 | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell | Fernando Gonzalez, Raymond A. Turi, Charles L. Ingalls | 1998-11-03 |
| 5814527 | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories | Steven T. Harshfield, Raymond A. Turi, Fernando Gonzalez, Guy T. Blalock, Donwon Park | 1998-09-29 |
| 5751012 | Polysilicon pillar diode for use in a non-volatile memory cell | Philip J. Ireland | 1998-05-12 |
| 5512504 | Method of making a memory array with field oxide islands eliminated | Albert Bergemont, Etan Shacham | 1996-04-30 |
| 5496754 | Method for preventing bit line-to-bit line leakage in the access transistor region of an AMG EPROM | Albert Bergemont | 1996-03-05 |
| 5422844 | Memory array with field oxide islands eliminated and method | Albert Bergemont, Etan Shacham | 1995-06-06 |
| 5397725 | Method of controlling oxide thinning in an EPROM or flash memory array | Albert Bergemont | 1995-03-14 |
| 5319593 | Memory array with field oxide islands eliminated and method | — | 1994-06-07 |