| 10991701 |
Multi-component conductive structures for semiconductor devices |
Fatma Arzum Simsek-Ege |
2021-04-27 |
$26,531,000 |
| 10777651 |
Gate stacks |
Yushi Hu, John Mark Meldrim, Everett A. McTeer, Matthew J. King |
2020-09-15 |
$12,657,000 |
| 10411017 |
Multi-component conductive structures for semiconductor devices |
Fatma Arzum Simsek-Ege |
2019-09-10 |
$13,427,000 |
| 10164044 |
Gate stacks |
Yushi Hu, John Mark Meldrim, Everett A. McTeer, Matthew J. King |
2018-12-25 |
|
| 10147727 |
Conductive structures, wordlines and transistors |
Jaydeb Goswami, Zailong Bian, Yushi Hu, Jaydip Guha, Thomas Gehrke |
2018-12-04 |
$13,328,000 |
| 9972628 |
Conductive structures, wordlines and transistors |
Jaydeb Goswami, Zailong Bian, Yushi Hu, Jaydip Guha, Thomas Gehrke |
2018-05-15 |
$61,592,000 |
| 8872252 |
Multi-tiered semiconductor apparatuses including residual silicide in semiconductor tier |
Anurag Jindal, Gowri Damarla, Roger W. Lindsay |
2014-10-28 |
$12,316,000 |
| 8426919 |
Integrated circuitry |
David H. Wells |
2013-04-23 |
$4,526,000 |
| 8216935 |
Methods of forming transistor gate constructions, methods of forming NAND transistor gate constructions, and methods forming DRAM transistor gate constructions |
Allen McTeer |
2012-07-10 |
$3,723,000 |
| 8035129 |
Integrated circuitry |
Nirmal Ramaswamy, Gurtej S. Sandhu, Cem Basceri |
2011-10-11 |
$2,134,000 |
| 7956416 |
Integrated circuitry |
David H. Wells |
2011-06-07 |
$3,124,000 |
| 7768036 |
Integrated circuitry |
Nirmal Ramaswamy, Gurtej S. Sandhu, Cem Basceri |
2010-08-03 |
$2,326,000 |
| 7662649 |
Methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses |
Nirmal Ramaswamy, Ross S. Dando, Joel Drewes |
2010-02-16 |
$3,260,000 |
| 7585371 |
Substrate susceptors for receiving semiconductor substrates to be deposited upon |
Nirmal Ramaswamy, Ross S. Dando, Joel Drewes, Danny Dynka |
2009-09-08 |
$7,238,000 |
| 7557002 |
Methods of forming transistor devices |
David H. Wells |
2009-07-07 |
$2,670,000 |
| 7538392 |
Pseudo SOI substrate and associated semiconductor devices |
Nirmal Ramaswamy, Joel Drewes |
2009-05-26 |
$2,939,000 |
| 7531395 |
Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors |
Gurtej S. Sandhu, Cem Basceri, Nirmal Ramaswamy |
2009-05-12 |
$4,144,000 |
| 7528424 |
Integrated circuitry |
Nirmal Ramaswamy, Gurtej S. Sandhu, Cem Basceri |
2009-05-05 |
$2,582,000 |
| 7517758 |
Method of forming a vertical transistor |
Nirmal Ramaswamy, Gurtej S. Sandhu, Cem Basceri |
2009-04-14 |
$2,483,000 |
| 7439136 |
Method of forming a layer comprising epitaxial silicon |
Nirmal Ramaswamy, Gurtej S. Sandhu, Cem Basceri |
2008-10-21 |
$1,313,000 |
| 7276416 |
Method of forming a vertical transistor |
Nirmal Ramaswamy, Gurtej S. Sandhu, Cem Basceri |
2007-10-02 |
$909,000 |
| 7268023 |
Method of forming a pseudo SOI substrate and semiconductor devices |
Nirmal Ramaswamy, Joel Drewes |
2007-09-11 |
$1,295,000 |
| 7253085 |
Deposition methods |
Gurtej S. Sandhu, Cem Basceri, Nirmal Ramaswamy |
2007-08-07 |
$1,952,000 |
| 7144779 |
Method of forming epitaxial silicon-comprising material |
Nirmal Ramaswamy, Gurtej S. Sandhu, Cem Basceri |
2006-12-05 |
$3,300,000 |
| 7132355 |
Method of forming a layer comprising epitaxial silicon and a field effect transistor |
Nirmal Ramaswamy, Gurtej S. Sandhu, Cem Basceri |
2006-11-07 |
$2,394,000 |
