Issued Patents All Time
Showing 25 most recent of 81 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12279420 | Memory having a continuous channel | Luan C. Tran, Hongbin Zhu, John D. Hopkins | 2025-04-15 |
| 12261112 | Signal lines in memory devices and methods for forming the same | Meilan Guo, Ke Ma, Jia Sun, Yu Long | 2025-03-25 |
| 12185537 | Integrated structures | Justin B. Dorhout, David Daycock, Kunal R. Parekh, Martin C. Roberts | 2024-12-31 |
| 12063780 | Memory cell structure of a three-dimensional memory device | Xiaowang Dai, Zhenyu Lu, Jun Chen, Qian Tao, Jifeng Zhu +4 more | 2024-08-13 |
| 11991880 | Three-dimensional memory devices and fabricating methods thereof | Zhenyu Lu, Yu Ru Huang, Qian Tao, Jun Chen, Xiaowang Dai +3 more | 2024-05-21 |
| 11968832 | Multiple-stack three-dimensional memory device and fabrication method thereof | Jun Liu, Zongliang Huo, Li Xiao, Zhenyu Lu, Qian Tao +4 more | 2024-04-23 |
| 11943928 | Method for forming channel hole plug of three-dimensional memory device | Li Xiao, Zhenyu Lu, Qian Tao, Jun Chen, Longdong Liu +1 more | 2024-03-26 |
| 11889686 | Vertical memory devices | Miao Shen, Li Xiao, Qian Tao, Mei Lan Guo, Yong Zhang +1 more | 2024-01-30 |
| 11839087 | Ferroelectric memory devices with reduced edge defects and methods for forming the same | — | 2023-12-05 |
| 11805646 | Three-dimensional memory devices and methods for forming the same | Zhenyu Lu, Jun Chen, Jifeng Zhu, Qian Tao, Simon Shi-Ning Yang +1 more | 2023-10-31 |
| 11805643 | Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector | Ruo Fang Zhang, Enbo Wang, Haohao Yang, Qianbing Xu, Qian Tao | 2023-10-31 |
| 11737263 | 3D NAND memory device and method of forming the same | Ruo Fang Zhang, Enbo Wang, Haohao Yang, Qianbing Xu, Fushan Zhang | 2023-08-22 |
| 11699657 | Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer | Jifeng Zhu, Zhenyu Lu, Jun Chen, Qian Tao, Simon Shi-Ning Yang +1 more | 2023-07-11 |
| 11690219 | Three-dimensional memory devices having through array contacts and methods for forming the same | Mei Lan Guo, Ji Xia, Hongbin Zhu | 2023-06-27 |
| 11658033 | Methods of forming assemblies having heavily doped regions | Shu Qin | 2023-05-23 |
| 11653494 | Memory cell pillar including source junction plug | Fatma Arzum Simsek-Ege, Krishna K. Parat, Luan C. Tran, Meng-Wei Kuo | 2023-05-16 |
| 11581322 | Three-dimensional memory devices having through array contacts and methods for forming the same | Mei Lan Guo, Ji Xia, Hongbin Zhu | 2023-02-14 |
| 11532636 | Three-dimensional memory devices having through array contacts and methods for forming the same | Mei Lan Guo, Ji Xia, Hongbin Zhu | 2022-12-20 |
| 11502094 | Multi-level vertical memory device including inter-level channel connector | Ruo Fang Zhang, Enbo Wang, Haohao Yang, Qianbing Xu, Qian Tao | 2022-11-15 |
| 11462474 | Three-dimensional memory devices having a plurality of NAND strings | Jifeng Zhu, Zhenyu Lu, Jun Chen, Qian Tao, Simon Shi-Ning Yang +1 more | 2022-10-04 |
| 11380701 | Memory device and forming method thereof | Yue Qiang Pu, Jin Wen Dong, Jun Chen, Zhenyu Lu, Qian Tao +5 more | 2022-07-05 |
| 11329061 | Method for improving channel hole uniformity of a three-dimensional memory device | Li Xiao, Qian Tao, Xiao Tian Cheng, Jian Xu, Haohao Yang +2 more | 2022-05-10 |
| 11315941 | Memory having a continuous channel | Luan C. Tran, Hongbin Zhu, John D. Hopkins | 2022-04-26 |
| 11309327 | Method for forming channel hole plug of three-dimensional memory device | Li Xiao, Zhenyu Lu, Qian Tao, Jun Chen, Longdong Liu +1 more | 2022-04-19 |
| 11289511 | Ferroelectric memory devices with reduced edge leakage and methods for forming the same | — | 2022-03-29 |