RZ

Ruo Fang Zhang

YC Yangtze Memory Technologies Co.: 5 patents #155 of 626Top 25%
Overall (All Time): #946,903 of 4,157,543Top 25%
5
Patents All Time

Issued Patents All Time

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
11805643 Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector Enbo Wang, Haohao Yang, Qianbing Xu, Yushi Hu, Qian Tao 2023-10-31
11737263 3D NAND memory device and method of forming the same Enbo Wang, Haohao Yang, Qianbing Xu, Yushi Hu, Fushan Zhang 2023-08-22
11502094 Multi-level vertical memory device including inter-level channel connector Enbo Wang, Haohao Yang, Qianbing Xu, Yushi Hu, Qian Tao 2022-11-15
11145667 3D NAND memory device and method of forming the same Enbo Wang, Haohao Yang, Qianbing Xu, Yushi Hu, Fushan Zhang 2021-10-12
10714493 Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same Haohao Yang, Yong Zhang, Enbo Wang, Fushan Zhang, Qianbin Xu 2020-07-14