QX

Qianbing Xu

YC Yangtze Memory Technologies Co.: 7 patents #123 of 626Top 20%
📍 Hubei, CN: #175 of 1,664 inventorsTop 15%
Overall (All Time): #705,161 of 4,157,543Top 20%
7
Patents All Time

Issued Patents All Time

Showing 1–7 of 7 patents

Patent #TitleCo-InventorsDate
11805643 Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector Ruo Fang Zhang, Enbo Wang, Haohao Yang, Yushi Hu, Qian Tao 2023-10-31
11737263 3D NAND memory device and method of forming the same Ruo Fang Zhang, Enbo Wang, Haohao Yang, Yushi Hu, Fushan Zhang 2023-08-22
11716843 Method for forming contact structures in three-dimensional memory devices Han Yang, Fanqing Zeng, Fushan Zhang, Enbo Wang 2023-08-01
11502094 Multi-level vertical memory device including inter-level channel connector Ruo Fang Zhang, Enbo Wang, Haohao Yang, Yushi Hu, Qian Tao 2022-11-15
11145667 3D NAND memory device and method of forming the same Ruo Fang Zhang, Enbo Wang, Haohao Yang, Yushi Hu, Fushan Zhang 2021-10-12
10937806 Through array contact (TAC) for three-dimensional memory devices Qian Tao, Yushi Hu, Zhenyu Lu, Li Xiao, Xiaowang Dai +8 more 2021-03-02
10658378 Through array contact (TAC) for three-dimensional memory devices Qian Tao, Yushi Hu, Zhenyu Lu, Li Xiao, Xiaowang Dai +8 more 2020-05-19