Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors

Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors

US Patent 7531395 · Granted May 12, 2009

Estimated economic value: $4,144,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

LED array package2025
LED array package2025
Methods of forming nanostructures utilizing self-assembled nucleic acids2025
Systems for fabrication of MMIC and RF devices on engineered substrates2025
Method of forming photonics structures2025
Polycrystalline ceramic substrate2025
String driver assemblies including two-dimensional materials, and related memory2025
Epitaxial single crystalline silicon growth for a horizontal access device2025
Polycrystalline ceramic substrate and method of manufacture2025
Engineered substrate structures for power and RF applications2025
Driver placement in memories having stacked memory arrays2025
Chip-on-board design with color mixing2025