| 11889680 |
Integrated assemblies and methods of forming integrated assemblies |
Richard J. Hill, Gurtej S. Sandhu |
2024-01-30 |
$12,191,000 |
| 11777036 |
Integrated assemblies and methods of forming integrated assemblies |
Richard J. Hill, Gurtej S. Sandhu |
2023-10-03 |
$10,230,000 |
| 11670707 |
Integrated assemblies and methods of forming integrated assemblies |
John F. Kaeding, Richard J. Hill, Scott E. Sills |
2023-06-06 |
$9,972,000 |
| 11393920 |
Integrated assemblies and methods of forming integrated assemblies |
John F. Kaeding, Richard J. Hill, Scott E. Sills |
2022-07-19 |
$10,980,000 |
| 10643906 |
Methods of forming a transistor and methods of forming an array of memory cells |
John Smythe, Haitao Liu, Richard J. Hill, Deepak Chandra Pandey |
2020-05-05 |
$23,260,000 |
| 9263095 |
Memory having buried digit lines and methods of making the same |
Kunal R. Parekh, Wen-Kuei Huang, Kuo-Chen Wang, Ching-Kai Lin |
2016-02-16 |
$6,293,000 |
| 9219001 |
Methods of forming semiconductor devices having recesses |
Aaron R. Wilson, Larson Lindholm |
2015-12-22 |
$12,441,000 |
| 9041086 |
Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells |
Larson Lindholm |
2015-05-26 |
$11,470,000 |
| 8716116 |
Method of forming a DRAM array of devices with vertically integrated recessed access device and digitline |
Kunal R. Parekh, Ceredig Roberts, Thy Tran, Jim A. Jozwiak |
2014-05-06 |
$7,858,000 |
| 8691656 |
Methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM |
Brett W. Busch, F. Daniel Gealy |
2014-04-08 |
$8,842,000 |
| 8497530 |
Semiconductor structures including dual fins |
Aaron R. Wilson, Larson Lindholm |
2013-07-30 |
$5,187,000 |
| 8497541 |
Memory having buried digit lines and methods of making the same |
Kunal R. Parekh, Wen-Kuei Huang, Kuo-Chen Wang, Ching-Kai Lin |
2013-07-30 |
$5,187,000 |
| 8211763 |
Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells |
Larson Lindholm |
2012-07-03 |
$4,934,000 |
| 8178911 |
Semiconductor device having reduced sub-threshold leakage |
Larson Lindholm |
2012-05-15 |
$4,423,000 |
| 8138526 |
Semiconductor structures including dual fins |
Aaron R. Wilson, Larson Lindholm |
2012-03-20 |
$6,038,000 |
| 8030168 |
Methods of forming DRAM memory cells |
Brett W. Busch, F. Daniel Gealy |
2011-10-04 |
$2,248,000 |
| 8022473 |
Semiconductor device having reduced sub-threshold leakage |
Larson Lindholm |
2011-09-20 |
$3,026,000 |
| 7948030 |
Semiconductor constructions of memory devices with different sizes of GateLine trenches |
Larson Lindholm, Aaron R. Wilson |
2011-05-24 |
$4,812,000 |
| 7935999 |
Memory device |
Gordon A. Haller, Sanh D. Tang, Ceredig Roberts |
2011-05-03 |
$4,193,000 |
| 7910971 |
Methods of forming vertical field effect transistors, vertical field effect transistors, and dram cells |
Larson Lindholm |
2011-03-22 |
$4,142,000 |
| 7897465 |
Semiconductor device having reduced sub-threshold leakage |
Larson Lindholm |
2011-03-01 |
$2,983,000 |
| 7879659 |
Methods of fabricating semiconductor devices including dual fin structures |
Aaron R. Wilson, Larson Lindholm |
2011-02-01 |
$4,880,000 |
| 7808041 |
Semiconductor constructions of memory device with different depth gate line trenches |
Larson Lindholm, Aaron R. Wilson |
2010-10-05 |
$2,944,000 |
| 7696568 |
Semiconductor device having reduced sub-threshold leakage |
Larson Lindholm |
2010-04-13 |
$3,701,000 |
| 7687342 |
Method of manufacturing a memory device |
Gordon A. Haller, Sanh D. Tang, Ceredig Roberts |
2010-03-30 |
$3,068,000 |
