JF

Janet M. Flanner

Lam Research: 13 patents #216 of 2,128Top 15%
ND North American Philips Corp., Signetics Division: 2 patents #4 of 43Top 10%
NP North American Philips: 1 patents #281 of 645Top 45%
Overall (All Time): #302,033 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6946303 Electronically diagnosing a component in a process line using a substrate signature James C. Vetter 2005-09-20
6890774 System and method for creating a substrate signature James C. Vetter 2005-05-10
6696366 Technique for etching a low capacitance dielectric layer Ian J. Morey, Susan Ellingboe, Christine Janowiak, John Lang 2004-02-24
6653734 Convertible hot edge ring to improve low-K dielectric etch Susan Ellingboe, Christine Janowiak, John Lang, Ian J. Morey 2003-11-25
6426304 Post etch photoresist strip with hydrogen for organosilicate glass low-&kgr; etch applications Ting-An Chien, Ian J. Morey 2002-07-30
6410437 Method for etching dual damascene structures in organosilicate glass Ian J. Morey 2002-06-25
6383931 Convertible hot edge ring to improve low-K dielectric etch Susan Ellingboe, Christine Janowiak, John Lang, Ian J. Morey 2002-05-07
6241845 Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer Prashant Gadgil, John P. Jordan, Adrian Doe, Robert Chebi 2001-06-05
6165910 Self-aligned contacts for semiconductor device Linda Marquez, Joel M. Cook, Ian J. Morey 2000-12-26
6133153 Self-aligned contacts for semiconductor device Linda Marquez 2000-10-17
6114250 Techniques for etching a low capacitance dielectric layer on a substrate Susan Ellingboe, Ian J. Morey 2000-09-05
6048798 Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer Prashant Gadgil, John P. Jordon, Adrian Doe, Robert Chebi 2000-04-11
5783496 Methods and apparatus for etching self-aligned contacts Prashant Gadgil, Linda Marquez, Adrian Doe, Joel M. Cook 1998-07-21
5021358 Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition Michelangelo Delfino 1991-06-04
4987099 Method for selectively filling contacts or vias or various depths with CVD tungsten — 1991-01-22
4822749 Self-aligned metallization for semiconductor device and process using selectively deposited tungsten Paulus Z. A. Van Der Putte 1989-04-18