Issued Patents All Time
Showing 25 most recent of 57 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12369312 | Vertical FinFet formation using directional deposition | Qintao Zhang | 2025-07-22 |
| 11955533 | Ion implantation to reduce nanosheet gate length variation | Baonian Guo, Qintao Zhang, Wei Zou, Kyuha Shim | 2024-04-09 |
| 11908917 | Gate structures | Jiehui Shu, Haiting Wang | 2024-02-20 |
| 11908857 | Semiconductor devices having late-formed isolation structures | Yanping Shen, Haiting Wang | 2024-02-20 |
| 11812670 | Memory device comprising a top via electrode and methods of making such a memory device | Yanping Shen, Haiting Wang | 2023-11-07 |
| 11785860 | Top electrode for a memory device and methods of making such a memory device | Haiting Wang, Yanping Shen | 2023-10-10 |
| 11728383 | Localized stressor formation by ion implantation | Wei Zou, Kyu-Ha Shim, Qintao Zhang | 2023-08-15 |
| 11728214 | Techniques for selective tungsten contact formation on semiconductor device elements | Wei Zou | 2023-08-15 |
| 11721728 | Self-aligned contact | Jiehui Shu, Halting Wang, Yanping Shen | 2023-08-08 |
| 11664419 | Isolation method to enable continuous channel layer | Wei Zou, Kyu-Ha Shim | 2023-05-30 |
| 11610972 | Technique for reducing gate induced drain leakage in DRAM cells | Qintao Zhang | 2023-03-21 |
| 11594441 | Handling for high resistivity substrates | Kyu-Ha Shim | 2023-02-28 |
| 11569437 | Memory device comprising a top via electrode and methods of making such a memory device | Yanping Shen, Halting Wang | 2023-01-31 |
| 11563085 | Transistors with separately-formed source and drain | Jiehui Shu, Baofu Zhu, Haiting Wang | 2023-01-24 |
| 11545574 | Single diffusion breaks including stacked dielectric layers | Haiting Wang, Rinus Tek Po Lee, Yue Hu | 2023-01-03 |
| 11538925 | Ion implantation to form step-oxide trench MOSFET | Yi Zheng, Qintao Zhang, John Hautala | 2022-12-27 |
| 11502200 | Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor material | Judson R. Holt, Haiting Wang, Yanping Shen | 2022-11-15 |
| 11437568 | Memory device and methods of making such a memory device | Yanping Shen, Haiting Wang | 2022-09-06 |
| 11437490 | Methods of forming a replacement gate structure for a transistor device | Haiting Wang | 2022-09-06 |
| 11430877 | Ion implantation to reduce nanosheet gate length variation | Baonian Guo, Qintao Zhang, Wei Zou, Kyuha Shim | 2022-08-30 |
| 11329158 | Three part source/drain region structure for transistor | Halting Wang, Judson R. Holt | 2022-05-10 |
| 11222844 | Via structures for use in semiconductor devices | Jun Lian, Haiting Wang, Yanping Shen | 2022-01-11 |
| 11177385 | Transistors with a hybrid source or drain | Haiting Wang, Jiehui Shu, Baofu Zhu | 2021-11-16 |
| 11164795 | Transistors with source/drain regions having sections of epitaxial semiconductor material | Judson R. Holt, Haiting Wang, Bangun Indajang | 2021-11-02 |
| 11164954 | Gate capping layers of semiconductor devices | Zhiguo Sun, Guoliang Zhu, Xinyuan Dou | 2021-11-02 |