SY

Sei Seung Yoon

QU Qualcomm: 73 patents #337 of 12,104Top 3%
Samsung: 20 patents #6,655 of 75,807Top 9%
TR Tram: 5 patents #8 of 33Top 25%
Micron: 5 patents #2,350 of 6,345Top 40%
TS T-Ram Semiconductor: 1 patents #16 of 26Top 65%
Overall (All Time): #13,504 of 4,157,543Top 1%
104
Patents All Time

Issued Patents All Time

Showing 25 most recent of 104 patents

Patent #TitleCo-InventorsDate
10713136 Memory repair enablement Fahad Ahmed, Chulmin Jung, Esin Terzioglu 2020-07-14
10446196 Flexible power sequencing for dual-power memory Mukund Narasimhan, Sharad Gupta, Adithya Bhaskaran 2019-10-15
10318726 Systems and methods to provide security to one time program data Anil Chowdary Kota, Bhadri Kubendran 2019-06-11
10133285 Voltage droop control Sanjay Bhagawan Patil, Daniel Stasiak, Martin Saint-Laurent, Rui Li, Bin Liang +1 more 2018-11-20
10049729 Flexible memory assistance scheme Esin Terzioglu, Chulmin Jung, Bin Liang 2018-08-14
9997208 High-speed level shifter Chulmin Jung, Po-Hung Chen, Fahad Ahmed, Changho Jung, David Li 2018-06-12
9978442 Lower power high speed decoding based dynamic tracking for memories Bin Liang, Tony Chung Yiu Kwok, Rui Li 2018-05-22
9959912 Timed sense amplifier circuits and methods in a semiconductor memory Chulmin Jung, Fahad Ahmed, Keejong Kim 2018-05-01
9940987 High-speed word line decoder and level-shifter Chulmin Jung, Po-Hung Chen, David Li 2018-04-10
9941881 Apparatus and method for latching data including AND-NOR or OR-NAND gate and feedback paths Changho Jung, Derek Yang 2018-04-10
9851730 Voltage droop control Sanjay Bhagawan Patil, Daniel Stasiak, Martin Saint-Laurent, Rui Li, Bin Liang +1 more 2017-12-26
9748003 Efficient coding for memory redundancy Chulmin Jung, Robert H. Hoem 2017-08-29
9666301 Scannable memories with robust clocking methodology to prevent inadvertent reads or writes Venugopal Boynapalli, Kashyap Ramachandra Bellur, Prabaharan Balu, Bilal Zafar, Alex Dongkyu Park 2017-05-30
9646681 Memory cell with improved write margin Changho Jung, Keejong Kim 2017-05-09
9627041 Memory with a voltage-adjustment circuit to adjust the operating voltage of memory cells for BTI effect screening Chulmin Jung, Fahad Ahmed, Keejong Kim 2017-04-18
9570192 System and method for reducing programming voltage stress on memory cell devices Anil Chowdary Kota, Bjorn Erik Grubelich 2017-02-14
9536578 Apparatus and method for writing data to memory array circuits Chulmin Jung, Changho Jung, Rakesh Vattikonda, Nishith Desai 2017-01-03
9484110 Mask-programmed read only memory with enhanced security Chulmin Jung, Esin Terzioglu, Steven M. Millendorf 2016-11-01
9401201 Write driver for memory Chulmin Jung, Fahad Ahmed, David Li 2016-07-26
9373388 Sense amplifier with pulsed control for pull-up transistors Fahad Ahmed, Chulmin Jung 2016-06-21
9324416 Pseudo dual port memory with dual latch flip-flop Tony Chung Yiu Kwok, Changho Jung, Nishith Desai 2016-04-26
9318165 Method and apparatus for low-level input sense amplification Chulmin Jung, Rui Li, Gregory Ameriada Uvieghara 2016-04-19
9252765 N-well switching circuit Esin Terzioglu, Gregory Ameriada Uvieghara, Balachander Ganesan, Anil Chowdary Kota 2016-02-02
9202555 Write word-line assist circuitry for a byte-writeable memory Changho Jung, Nishith Desai 2015-12-01
9165619 Apparatus and method for reading data from multi-bank memory circuits Hui Song, Jongwon Lee 2015-10-20