Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12381297 | Cylindrical non-aqueous electrolyte secondary cell | Shota Koyama, Tomohiko Yokoyama, Ryo Kashimura, Ryota Okimoto | 2025-08-05 |
| 8482097 | Semiconductor device | — | 2013-07-09 |
| 8283235 | Method of manufacturing semiconductor device | — | 2012-10-09 |
| 6913970 | Semiconductor device and method of manufacturing the same | Kenichi Inoue, Yoshinori Obata, Takeyasu Saito, Kaoru Saigoh, Naoya Sashida +5 more | 2005-07-05 |
| 6674633 | Process for producing a strontium ruthenium oxide protective layer on a top electrode | Shan Sun, George Hickert, Katsuyoshi Matsuura, Takeyasu Saito, Soichiro Ozawa +4 more | 2004-01-06 |
| 6509593 | Semiconductor device and method of manufacturing the same | Kenichi Inoue, Yoshinori Obata, Takeyasu Saito, Kaoru Saigoh, Naoya Sashida +5 more | 2003-01-21 |
| 6287986 | Sputtering film forming method, sputtering film forming equipment, and semiconductor device manufacturing method | — | 2001-09-11 |
| 6071828 | Semiconductor device manufacturing method including plasma etching step | — | 2000-06-06 |
| 6044850 | Semiconductor device manufacturing method including ashing process | Soichiro Ozawa, Kunihiko Nagase, Masaaki Aoyama, Naoki Nishida | 2000-04-04 |
| 6020111 | Method of manufacturing semiconductor device with patterned lamination of Si film and metal film | — | 2000-02-01 |
| 5750208 | Method for plasma downstream processing | — | 1998-05-12 |
| 5681780 | Manufacture of semiconductor device with ashing and etching | Keisuke Shinagawa, Tatsuya Takeuchi | 1997-10-28 |
| 5562775 | Plasma downstream processing | — | 1996-10-08 |
| 5560803 | Plasma ashing method with oxygen pretreatment | Daisuke Komada | 1996-10-01 |
| 5447598 | Process for forming resist mask pattern | Kouji Nozaki, Yukari Mihara | 1995-09-05 |
| 5030316 | Trench etching process | Takushi Motoyama, Naomichi Abe | 1991-07-09 |
| 4987284 | Downstream microwave plasma processing apparatus having an improved coupling structure between microwave plasma | Shuzo Fujimura, Toshimasa Kisa, Yasunari Motoki | 1991-01-22 |