Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6946303 | Electronically diagnosing a component in a process line using a substrate signature | James C. Vetter | 2005-09-20 |
| 6890774 | System and method for creating a substrate signature | James C. Vetter | 2005-05-10 |
| 6696366 | Technique for etching a low capacitance dielectric layer | Ian J. Morey, Susan Ellingboe, Christine Janowiak, John Lang | 2004-02-24 |
| 6653734 | Convertible hot edge ring to improve low-K dielectric etch | Susan Ellingboe, Christine Janowiak, John Lang, Ian J. Morey | 2003-11-25 |
| 6426304 | Post etch photoresist strip with hydrogen for organosilicate glass low-&kgr; etch applications | Ting-An Chien, Ian J. Morey | 2002-07-30 |
| 6410437 | Method for etching dual damascene structures in organosilicate glass | Ian J. Morey | 2002-06-25 |
| 6383931 | Convertible hot edge ring to improve low-K dielectric etch | Susan Ellingboe, Christine Janowiak, John Lang, Ian J. Morey | 2002-05-07 |
| 6241845 | Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer | Prashant Gadgil, John P. Jordan, Adrian Doe, Robert Chebi | 2001-06-05 |
| 6165910 | Self-aligned contacts for semiconductor device | Linda Marquez, Joel M. Cook, Ian J. Morey | 2000-12-26 |
| 6133153 | Self-aligned contacts for semiconductor device | Linda Marquez | 2000-10-17 |
| 6114250 | Techniques for etching a low capacitance dielectric layer on a substrate | Susan Ellingboe, Ian J. Morey | 2000-09-05 |
| 6048798 | Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer | Prashant Gadgil, John P. Jordon, Adrian Doe, Robert Chebi | 2000-04-11 |
| 5783496 | Methods and apparatus for etching self-aligned contacts | Prashant Gadgil, Linda Marquez, Adrian Doe, Joel M. Cook | 1998-07-21 |
| 5021358 | Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition | Michelangelo Delfino | 1991-06-04 |
| 4987099 | Method for selectively filling contacts or vias or various depths with CVD tungsten | — | 1991-01-22 |
| 4822749 | Self-aligned metallization for semiconductor device and process using selectively deposited tungsten | Paulus Z. A. Van Der Putte | 1989-04-18 |