| 9006114 |
Method for selectively removing a spacer in a dual stress liner approach |
Kai Frohberg, Volker Grimm, Heike Salz |
2015-04-14 |
| 8883582 |
High-K gate electrode structure formed after transistor fabrication by using a spacer |
Kai Frohberg, Uwe Griebenow, Katrin Reiche |
2014-11-11 |
| 8497583 |
Stress reduction in chip packaging by a stress compensation region formed around the chip |
Dmytro Chumakov, Michael Grillberger, Katrin Reiche |
2013-07-30 |
| 8470661 |
High-K gate electrode structure formed after transistor fabrication by using a spacer |
Kai Frohberg, Uwe Griebenow, Katrin Reiche |
2013-06-25 |
| 8440534 |
Threshold adjustment for MOS devices by adapting a spacer width prior to implantation |
Uwe Griebenow, Jan Hoentschel, Kai Frohberg, Katrin Reiche, Frank Feustel +1 more |
2013-05-14 |
| 8361844 |
Method for adjusting the height of a gate electrode in a semiconductor device |
Kai Frohberg, Katrin Reiche, Uwe Griebenow |
2013-01-29 |
| 8349744 |
Double deposition of a stress-inducing layer in an interlayer dielectric with intermediate stress relaxation in a semiconductor device |
Kai Frohberg, Uwe Griebenow, Katrin Reiche |
2013-01-08 |
