Issued Patents All Time
Showing 1–25 of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9099377 | Micropipe-free silicon carbide and related method of manufacture | Cem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan +6 more | 2015-08-04 |
| 8618553 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das | 2013-12-31 |
| 8410488 | Micropipe-free silicon carbide and related method of manufacture | Cem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan +6 more | 2013-04-02 |
| 7880171 | Minimizing degradation of SiC bipolar semiconductor devices | Joseph Sumakeris, Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood +1 more | 2011-02-01 |
| 7811943 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das | 2010-10-12 |
| 7427326 | Minimizing degradation of SiC bipolar semiconductor devices | Joseph Sumakeris, Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood +1 more | 2008-09-23 |
| 7323051 | One hundred millimeter single crystal silicon carbide wafer | Hudson M. Hobgood, Jason Jenny, David Phillip Malta, Valeri F. Tsvetkov, Robert Tyler Leonard +1 more | 2008-01-29 |
| 7316747 | Seeded single crystal silicon carbide growth and resulting crystals | Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady +4 more | 2008-01-08 |
| 7220313 | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient | George J. Fechko, Jr., Jason Jenny, Hudson M. Hobgood, Valeri F. Tsvetkov | 2007-05-22 |
| 6974720 | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby | Joseph Sumakeris, Hudson M. Hobgood, Michael James Paisley, Jason Jenny, Valeri F. Tsvetkov | 2005-12-13 |
| 6964917 | Semi-insulating silicon carbide produced by Neutron transmutation doping | Valeri F. Tsvetkov, Hudson M. Hobgood, Jason Jenny | 2005-11-15 |
| 6849874 | Minimizing degradation of SiC bipolar semiconductor devices | Joseph Sumakeris, Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood +1 more | 2005-02-01 |
| 6639247 | Semi-insulating silicon carbide without vanadium domination | Mark Brady, Valeri F. Tsvetkov | 2003-10-28 |
| 6530990 | Susceptor designs for silicon carbide thin films | Hua-Shuang Kong, Joseph Sumakeris | 2003-03-11 |
| 6403982 | Semi-insulating silicon carbide without vanadium domination | Mark Brady, Valeri F. Tsvetkov | 2002-06-11 |
| 6396080 | Semi-insulating silicon carbide without vanadium domination | Mark Brady, Valeri F. Tsvetkov | 2002-05-28 |
| 6217662 | Susceptor designs for silicon carbide thin films | Hua-Shuang Kong, Joseph Sumakeris | 2001-04-17 |
| 6218680 | Semi-insulating silicon carbide without vanadium domination | Mark Brady, Valeri F. Tsvetkov | 2001-04-17 |
| 6200917 | Colorless silicon carbide gemstones | Valeri F. Tsvetkov, Robert C. Glass | 2001-03-13 |
| 6025289 | Colorless silicon carbide crystals | Valeri F. Tsvetkov, Robert C. Glass | 2000-02-15 |
| 5718760 | Growth of colorless silicon carbide crystals | Valeri F. Tsvetkov, Robert C. Glass | 1998-02-17 |
| 5679153 | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures | Vladimir A. Dmitriev, Svetlana V. Rendakova, Vladimir Ivantsov | 1997-10-21 |
| 5465249 | Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate | James A. Cooper, John Williams Palmour | 1995-11-07 |
| RE34861 | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide | Robert F. Davis, Charles Eric Hunter | 1995-02-14 |
| 5381103 | System and method for accelerated degradation testing of semiconductor devices | John Edmond, Douglas A. Asbury, Douglas G. Waltz | 1995-01-10 |